TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit • Including two devices in SM6 (super-mini-type with six (6) leads) • With built-in bias resistors. • Simplified circuit design • Reduce a quantity of parts and manufacturing process and miniaturize equipment. • Various re

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：NPN×2\nInternal Connection：2-in-1 (Point-symmetrical)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current (Q1) IC 0.1 A \nCollector Current (Q2) IC 0.1 A \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter voltage (Q2) VCEO 50 V ;

Dual Port RAM

DESCRIPTION The DS1609 is a random access 256–byte dual port memory designed to connect two asyncronous address/data buses together with a common memory element. Both ports have unrestricted access to all 256 bytes of memory, and with modest system discipline no arbitration is required. Each port

NPN EPITAXIAL PLANAR TRANSISTOR

Description • Low frequency high voltage amplifier. • Complementary pair with HJ1109.

NPN EPITAXIAL PLANAR TRANSISTOR

Features • Low frequency high voltage amplifier • Complementary pair with HSB1109

Octal SMBus-to-Parallel I/O Expanders

General Description The MAX1608/MAX1609 provide remote input/output (I/O) expansion through an SMBus™ 2-wire serial interface. Each device has eight high-voltage open-drain outputs that double as TTL-level logic inputs, providing continuous bidirectional capabilities. The open-drain outputs

Integrated Circuit Instrumentation Timer

Description: The NTE1609 is a monolithic integrated circuit in a 7–Lead SIP type package consisting of a timer developed for use in measurement instrumentation, control equipment and digital data procesing equipment. This device is designed to require few externally connected components. F