丝印代码：QG；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC (max) = 800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN2401~RN2406

Bias resistor built-in transistor (BRT)

Feature：High current\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2427\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 0.8 A \nCollector-emitter voltage VCEO 50 V ;

丝印代码：QG；Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：547.59 Kbytes Page：8 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PREBIAS NPN 50V 0.8A SMINI 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

HORIZONTAL DEFLECTION POWER TRANSISTOR

5 AMPERE POWER TRANSISTORS 1500 VOLTS 80 WATTS

Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers

1.2A Dual High-Speed MOSFET Drivers

GENERAL DESCRIPTION The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic transistor responsible for CMOS latch

1.2A DUAL HIGH-SPEED MOSFET DRIVERS

文件：81.03 Kbytes Page：6 Pages

1.2A DUAL HIGH-SPEED MOSFET DRIVERS

文件：81.03 Kbytes Page：6 Pages