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RN1306晶体管资料
RN1306别名:RN1306三极管、RN1306晶体管、RN1306晶体三极管
RN1306生产厂家:
RN1306制作材料:Si-N+R
RN1306性质:表面帖装型 (SMD)
RN1306封装形式:贴片封装
RN1306极限工作电压:50V
RN1306最大电流允许值:0.1A
RN1306最大工作频率:<1MHZ或未知
RN1306引脚数:3
RN1306最大耗散功率:0.4W
RN1306放大倍数:
RN1306图片代号:H-15
RN1306vtest:50
RN1306htest:999900
- RN1306atest:0.1
RN1306wtest:0.4
RN1306代换 RN1306用什么型号代替:DTC143ZU,
RN1306价格
参考价格:¥0.2256
型号:RN1306(TE85L,F) 品牌:Toshiba 备注:这里有RN1306多少钱,2026年最近7天走势,今日出价,今日竞价,RN1306批发/采购报价,RN1306行情走势销售排行榜,RN1306报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RN1306 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ● With built-in bias resistors. ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN2301 to RN2306 | TOSHIBA 东芝 | ||
RN1306 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 文件:251.31 Kbytes Page:7 Pages | TOSHIBA 东芝 | ||
RN1306 | Bias resistor built-in transistor (BRT) | TOSHIBA 东芝 | ||
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ● With built-in bias resistors. ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN2301 to RN2306 | TOSHIBA 东芝 | |||
封装/外壳:SC-70,SOT-323 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PREBIAS NPN 50V 0.1A USM 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置 | ETC 知名厂家 | ETC | ||
封装/外壳:SC-70,SOT-323 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:AUTO AEC-Q SINGLE NPN , R1=4.7KO 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置 | ETC 知名厂家 | ETC | ||
Serial Alarm Real Time Clock RTC FEATURES Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 96-byte nonvolatile RAM for data storage Two Time of Day Alarms - programmable on combination of seconds, minutes, hours, and day of th | DALLAS | |||
TMOS POWER FET 75 AMPERES The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is des | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie | MOTOROLA 摩托罗拉 | |||
Bridge Diodes Rectifier Diodes 600V | SANKEN 三垦 | |||
Noise shaping filter DAC GENERAL DESCRIPTION The TDA1306T is a dual CMOS digital-to-analog converter with up-sampling filter and noise shaper. The combination of oversampling up to 4fs, noise shaping and continuous calibration conversion ensures that only simple 1st-order analog post-filtering is required. FEATURES Gen | PHILIPS 飞利浦 |
RN1306产品属性
- 类型
描述
- 型号
RN1306
- 功能描述
开关晶体管 - 偏压电阻器 INCORRECT MOUSER P/N 4.7K x 47Kohms
- RoHS
否
- 制造商
ON Semiconductor
- 晶体管极性
NPN/PNP
- 安装风格
SMD/SMT
- 封装/箱体
直流集电极/Base Gain hfe
- Min
200 mA
- 最大工作频率
集电极—发射极最大电压
- VCEO
50 V
- 集电极连续电流
150 mA
- 功率耗散
200 mW
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
2016+ |
SOT323 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TOSHIBA |
24+ |
323 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
TOSHIBA/东芝 |
2026+ |
SOT323 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
TOSHIBA/东芝 |
24+ |
SOT23-3 |
880000 |
明嘉莱只做原装正品现货 |
|||
原装TOSHIBA |
24+ |
SOT-323 |
63200 |
一级代理/放心采购 |
|||
SOT-323 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
TOSHIBA |
22+ |
SOT-323 |
3000 |
原装正品,支持实单 |
|||
TOSHIBA |
05+PB/ |
SOT23-3 |
5600 |
全新原装进口自己库存优势 |
|||
TOSHIBA(东芝) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TOSHIBA/东芝 |
2450+ |
SOT23-3 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
RN1306规格书下载地址
RN1306参数引脚图相关
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RN1306数据表相关新闻
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属性 参数值 商品目录 金属膜电阻 阻值(欧姆) 1K 精度 ±1%_ 安装类型 通孔 功率 1/4W 温度系数 ±50ppm/°C属性 参数值 商品目录 金属膜电阻 阻值(欧姆) 1K 精度 ±1%_ 安装类型 通孔 功率 1/4W 温度系数 ±50ppm/°C
2020-12-4RN2706JE
类别 分立半导体产品 晶体管 - 双极(BJT)- 阵列 - 预偏置 制造商 Toshiba Semiconductor and_Storage 系列 - 包装 带卷(TR) 零件状态 有源 晶体管类型 2 PNP - 预偏压(双)(耦合发射器) 电流 - 集电极 (Ic)(最大值) 100mA 电压 - 集射极击穿(最大值) 50V 电阻器 - 基极 (R1) 4.7 千欧 电阻
2020-10-15RN171-I/RM原装MicrochipWiFi模块
只做原装,假一罚十,可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-3-14
DdatasheetPDF页码索引
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