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RN1209晶体管资料
RN1209别名:RN1209三极管、RN1209晶体管、RN1209晶体三极管
RN1209生产厂家:日本东芝公司
RN1209制作材料:Si-N+R
RN1209性质:表面帖装型 (SMD)
RN1209封装形式:直插封装
RN1209极限工作电压:50V
RN1209最大电流允许值:0.1A
RN1209最大工作频率:<1MHZ或未知
RN1209引脚数:3
RN1209最大耗散功率:0.1W
RN1209放大倍数:
RN1209图片代号:A-57
RN1209vtest:50
RN1209htest:999900
- RN1209atest:0.1
RN1209wtest:0.1
RN1209代换 RN1209用什么型号代替:RN1009,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RN1209 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2207~2209 | TOSHIBA 东芝 | ||
RN1209 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 文件:287.26 Kbytes Page:5 Pages | TOSHIBA 东芝 | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime | POLYFET | |||
42-Bit Vacuum Fluorescent Display Tube Driver with Digital Dimming Function GENERAL DESCRIPTION The MSC1209 is a Bi-CMOS display driver for a 1/2-duty vacuum fluorescent display tube. The MSC1209 consists of an 84-bit shift register, an 84-bit latch circuit, a 10-bit digital dimming circuit, 42-bit segment drivers, a 2-bit grid circuit, and a cascade control circuit. Th | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | |||
CCD LINEAR IMAGE SENSOR CCD LINEAR IMAGE SENSOR CCD (Charge Coupled Device) The TCD1209D is a high speed and low dark current 2048 elements CCD image sensor. The sensor is designed for facsimile, imagescanner and OCR. The device contains a row of 2048 elements photodiodes which provide a 8 lines / mm (200 DP | TOSHIBA 东芝 | |||
1A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE & FIXED REGULATOR DESCRIPTION The US1206 family of devices are ultra low dropout 1A regulators using PNP transistor as the pass element. These products are ideal when a single input supply is available only and the dropout voltage is less than 1V, exceeding the minimum dropout characteristics of NPN/PNP hybrid reg | UNISEM | |||
12-Bit, uP Compatible, Double-Buffered D to A Converters 文件:361.79 Kbytes Page:18 Pages | NSC 国半 |
RN1209产品属性
- 类型
描述
- 型号
RN1209
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
TOSHIBA Transistor Silicon NPN Epitaxial Type(PCT Process)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
TOSHIBA |
24+ |
TO-92 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RECOM |
25+ |
DIP |
55000 |
原厂渠道原装正品假一赔十 |
|||
TOSHIBA |
24+ |
TO-92 |
5000 |
||||
TOSHIBA |
18+ |
SOT-323 |
45225 |
全新 发货1-2天 |
|||
TOS |
22+ |
TO-92 |
20000 |
公司只做原装 品质保障 |
|||
TOSHIBA |
23+ |
TO-92 |
5000 |
原装正品,假一罚十 |
|||
TOSHIBA |
24+/25+ |
7000 |
原装正品现货库存价优 |
||||
TOSHIBA |
05+ |
TO-92 |
2350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA/东芝 |
24+ |
TO-92 |
9000 |
只做原装,欢迎询价,量大价优 |
RN1209规格书下载地址
RN1209参数引脚图相关
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RN1209数据表相关新闻
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原厂原装 正品现货 价格优势 有单必成
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属性 参数值 商品目录 金属膜电阻 阻值(欧姆) 1K 精度 ±1%_ 安装类型 通孔 功率 1/4W 温度系数 ±50ppm/°C属性 参数值 商品目录 金属膜电阻 阻值(欧姆) 1K 精度 ±1%_ 安装类型 通孔 功率 1/4W 温度系数 ±50ppm/°C
2020-12-4RN2706JE
类别 分立半导体产品 晶体管 - 双极(BJT)- 阵列 - 预偏置 制造商 Toshiba Semiconductor and_Storage 系列 - 包装 带卷(TR) 零件状态 有源 晶体管类型 2 PNP - 预偏压(双)(耦合发射器) 电流 - 集电极 (Ic)(最大值) 100mA 电压 - 集射极击穿(最大值) 50V 电阻器 - 基极 (R1) 4.7 千欧 电阻
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只做原装,假一罚十,可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-3-14
DdatasheetPDF页码索引
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