Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2110\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC 0.1 A \nCollector-emitter voltage VCEO 50 V ;

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

文件：259.959 Kbytes Page：5 Pages

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2110CT\nRoHS Compatible Product(s) (#)：Available Collector Current IC 0.05 A \nCollector-emitter voltage VCEO 20 V ;

Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2110MFV\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC 0.1 A \nCollector-emitter voltage VCEO 50 V ;

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering as

封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 50V 0.1A SSM 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：AUTO AEC-Q SINGLE NPN Q1BSR=4.7K 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

文件：259.959 Kbytes Page：5 Pages

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

文件：160.61 Kbytes Page：6 Pages

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：159.72 Kbytes Page：5 Pages

Photo Interrupter

Photo Interrupter For contactless SW, object detection Outline ON1110 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements ar

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boa

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boa

Silicon PNP epitaxial planer transistor

For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UN1110 × 2 elements

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.