4.90-5.85 GHz InGaP HBT Linear Power Amplifier

General Description The RMPA5251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50Ω minimizes next level PCB space and allo

封装/外壳：16-VFQFN 裸露焊盘 包装：卷带（TR） 描述：IC AMP 802.11 4.9-5.85GHZ 16LCC RF/IF，射频/中频和 RFID 射频放大器

4.90-5.85 GHz InGaP HBT Linear Power Amplifier

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Pb free product : 99 Sn above can meet RoHS environment substance diective request

Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of 32 types with nominal working voltages from 3.3 to 75 V. FEATURES • Total power dissipation: max. 250 mW • Tolerance series: ±5 • Working voltage range: nom. 3.3 to 75 V • Non-repetiti