Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz

General Description The RMPA2265 power amplifier module (PAM) is designed for WCDMA/HSDPA applications in both the 1850–1910 and 1920–1980 MHz bands. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current

封装/外壳：8-TDFN 裸露焊盘 包装：卷带（TR） 描述：IC AMP W-CDMA 1.92-1.98GHZ 8LCC RF/IF，射频/中频和 RFID 射频放大器

Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

Current Limit High Side Switch ICs

General Description BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. F

Current Limit High Side Switch ICs

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InsulKrimp??Fully Insulated Female Quick

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InsulKrimp??Fully Insulated Female Quick Disconnect for 10-12 AWG WireContinuous Molded Strip

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