位置：首页 > IC中文资料 > RM80N60LD-T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
600V,80AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®sfieldstopIGBTsoffertheoptimumperformanceforinductionheating,telecom,ESSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage: | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   | |
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,80AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®sfieldstopIGBTsoffertheoptimumperformanceforinductionheating,telecom,ESSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage: | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HiPerFASTIGBT 文件：41.32 Kbytes Page：2 Pages | IXYS IXYS Integrated Circuits Division |  | | |
HighCurrentIGBT 文件：45.33 Kbytes Page：2 Pages | IXYS IXYS Integrated Circuits Division | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
TO-247 |
8800 |
公司只做原装正品 |
|||
ON |
18+ |
TO-247 |
3330 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON/安森美 |
22+ |
TO-247 |
6000 |
只做原装,假一赔十 |
|||
ONSemiconductor |
18+ |
NA |
3182 |
进口原装正品优势供应QQ3171516190 |
|||
ON/安森美 |
2339+ |
TO-247 |
32280 |
原装现货 假一罚十！十年信誉只做原装！ |
|||
ON/安森美 |
22+ |
TO-247 |
10000 |
十年沉淀唯有原装 |
|||
ON/安森美 |
21+ |
TO-247 |
8080 |
公司只做原装,诚信经营 |
|||
ON/安森美 |
21+ |
TO-247 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
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RM80N60LD-T规格书下载地址
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DdatasheetPDF页码索引
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