| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RM6N800HD | N-Channel Super Junction Power MOSFET III Features New technology for high voltage device Low on-resistance and low conduction losses. small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant | RECTRON 丽正国际 |   | |
RM6N800HD | MOSFET | RECTRON 丽正国际 | | |
N-Channel Super Junction Power MOSFET III Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant | RECTRON 丽正国际 | | ||
N-Channel Super Junction Power MOSFET III Features Now technology for high voltage device Low on-resistance and low conduction losses Smal package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant | RECTRON 丽正国际 | | ||
N-Channel Super Junction Power MOSFET III Features Now technology for high voltage device Low on-resistance and low conduction losses Smal package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant | RECTRON 丽正国际 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PMC |
22+ |
BGA |
3000 |
原装正品,支持实单 |
|||
PMC |
25+ |
BGA |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
PMC |
22+ |
BGA |
2000 |
原装正品现货 |
|||
PMC |
17+ |
BGA |
6200 |
100%原装正品现货 |
|||
QED |
23+ |
BGA |
5000 |
原装正品,假一罚十 |
|||
FERROXCUBEHONGKONGLTD |
24+ |
2122 |
|||||
QED |
24+ |
BGA |
9600 |
原装现货,优势供应,支持实单! |
|||
PMC |
16+ |
BGA |
1356 |
进口原装现货/价格优势! |
|||
QED |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
QED |
1923+ |
BGA |
2000 |
公司原装现货特价处理 |
RM6N800HD芯片相关品牌
RM6N800HD规格书下载地址
RM6N800HD参数引脚图相关
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- RM561K
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- RM5532T
RM6N800HD数据表相关新闻
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2020-10-23
DdatasheetPDF页码索引
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