N-Channel Enhancement Mode Power MOSFET

General Features VDS = 30V,ID = 5.8A RDS(ON)

N-Channel Enhancement Mode Mosfet

Features High dense cell design for extremely low RDS(on). Exceptional on-resistance and maximum DC current capability. Load/Power Switching. Interfacing Switching

P-Channel Enhancement Mode Power MOSFET

Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -4.2A RDS(ON)

P-Channel Enhancement Mode Mosfet

Features High dense cell design for extremely low RDS(on). Exceptional on-resistance and maximum DC current capability. Load/Power Switching. Interfacing Switching

N-Channel MOSFET

FEATURES Lead free product is acquired Surface mount package

N-Channel Enhancement Mode Power MOSFET

Genera Features VDS = 30V,ID = 5.8A RDS(ON)

N-Channel Enhancement Mode Power MOSFET

G eneral Features Vds(V) = 30V Io = 6.5 A (Vgs = 10V) Rds(on)

N-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET

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