| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RM2312 | 丝印代码:2312;N-Channel Enhancement Mode Power MOSFET 文件:166.6 Kbytes Page:7 Pages | RECTRON 丽正 | ||
RM2312 | 20V N-Channel MOSFET | RM TECHNOLOGY | ||
9-bit 20MSPS Video A/D Converter Description The CXD2312R is a 9-bit CMOS A/D converter for video applications. This IC is ideally suited for the A/D conversion of video signals in TVs, VCRs, camcorders, etc. Features • Resolution: 9-bit ±0.5 LSB (D.L.E.) • Maximum sampling frequency: 20MSPS • Low power consumption: 130mW (a | SONYSony Corporation 索尼 | |||
Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch–mode applications such as switching regulators, inverter | NTE | |||
LINEAR GENERAL PURPOSE AMPLIFIER Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran sistor (HBT) process, and has been designed for use as an easily cascadable 75Ωgain block. The gain flatness of | RFMD 威讯联合 | |||
LINEAR GENERAL PURPOSE AMPLIFIER Product Description The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran sistor (HBT) process, and has been designed for use as an easily cascadable 75Ωgain block. The gain flatness of | RFMD 威讯联合 | |||
PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications 文件:662.5 Kbytes Page:29 Pages | NSC 国半 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
26+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
RM2312规格书下载地址
RM2312参数引脚图相关
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RM2312数据表相关新闻
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2018-12-30
DdatasheetPDF页码索引
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