位置：首页 > IC中文资料 > RLS4606,1N5356B,BCW61CMTF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N and P-Channel Enhancement Mode Power MOSFET Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.9A RDS(ON) | TUOFENG 拓锋半导体 |   | ||
High Q, high self-resonant frequency Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Complementary High Density Trench MOSFET 文件：317.57 Kbytes Page：7 Pages | TUOFENG 拓锋半导体 | | ||
Binary reduction valve 文件：99.4 Kbytes Page：1 Pages | FESTOFesto Corporation. 费斯托费斯托（中国）有限公司 | | ||
N- and P-Channel 30 V (D-S) MOSFET 文件：1.22669 Mbytes Page：14 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EBMPAPST |
23+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
BOURNS/伯恩斯 |
2025+ |
NA |
5000 |
原装进口价格优 请找坤融电子! |
|||
Bourns(伯恩斯) |
24+ |
SIP-6-2.54mm |
42461 |
免费送样,账期支持,原厂直供,没有中间商赚差价 |
|||
Molex |
25+23+ |
25005 |
绝对原装正品全新进口深圳现货 |
||||
RZC |
SOP-8 |
999999 |
全新原装正品 一级代理假一罚十 长期有货 |
||||
ebm-papst |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
MOLEX |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
|||
AMPHENOL/安费诺 |
26+ |
NA |
360000 |
只有原装 |
|||
BOURNS/伯恩斯 |
2023+ |
ZIP-6 |
2000 |
一级代理优势现货,全新正品直营店 |
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RLS4606,1N5356B,BCW61CMTF规格书下载地址
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DdatasheetPDF页码索引
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