位置：首页 > IC中文资料第3547页 > RLD03N06
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
0.3A,60V,6Ohm,ESDRated,CurrentLimited,VoltageClamped,LogicLevelN-ChannelPowerMOSFETs Theseareintelligentmonolithicpowercircuitswhichincorporatealateralbipolartransistor,resistors,zenerdiodesandapowerMOStransistor.Thecurrentlimitingofthesedevicesallowittobeusedsafelyincircuitswhereashortedloadconditionmaybeencountered.Thedrainto source | Intersil Intersil Corporation |  |   | |
0.3A,60V,6Ohm,ESDRated,CurrentLimited,VoltageClamped,LogicLevelN-ChannelPowerMOSFETs Theseareintelligentmonolithicpowercircuitswhichincorporatealateralbipolartransistor,resistors,zenerdiodesandapowerMOStransistor.Thecurrentlimitingofthesedevicesallowittobeusedsafelyincircuitswhereashortedloadconditionmaybeencountered.Thedrainto source | Intersil Intersil Corporation | | | |
0.3A,60V,ESDRated,CurrentLimited,VoltageClampedLogicLevelN-ChannelEnhancement-ModePowerMOSFETs 文件：188.51 Kbytes Page：13 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
0.3A,60V,ESDRated,CurrentLimited,VoltageClampedLogicLevelN-ChannelEnhancement-ModePowerMOSFETs 文件：188.51 Kbytes Page：13 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-ChannelEnhancementModePowerMOSFET Description The03N06usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 |  | | |
N-ChannelEnhancementModePowerMOSFET Description The03N06Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | | | |
N-ChannelEnhancementModePowerMOSFET Description The03N06Lusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | | | |
MOSFET Features -Improveddv/dtcapability. -Fastswitching. -RDS(ON)≤100mΩ@VGS=10V. -AEC-Q101Qualified. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 |  | | |
MOSFET Features -HighdensitycelldesignforlowRDS(ON). -Excellentpackageforheatdissipation. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | | |
RLD03N06产品属性
- 类型
描述
- 型号
RLD03N06
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
20+ |
现货很近!原厂很远!只做原装 |
32500 |
现货很近!原厂很远!只做原装 |
|||
FAIRCHILD/仙童 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
INTERSIL |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
HAR |
23+ |
RLD03N06CLES |
13528 |
振宏微原装正品,假一罚百 |
|||
FAICHILD |
08+ |
5000 |
普通 |
||||
FAIRCHILD/仙童 |
2022+ |
5000 |
原厂代理 终端免费提供样品 |
||||
FAICHILD |
24+ |
105000 |
|||||
HARRISCORPORATION |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
FCS |
2022+ |
TO-252 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
FAIRCHILD/仙童 |
21+ |
9852 |
只做原装正品现货!或订货假一赔十! |
RLD03N06芯片相关品牌
RLD03N06规格书下载地址
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RLD03N06数据表相关新闻
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2020-6-23
DdatasheetPDF页码索引
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