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型号 功能描述 生产厂家 企业 LOGO 操作
RKBPC802

8 AMP FAST RECOVERY BRIDGE RECTIFIER

FEATURES • Rating to 1000V PRV • High efficiency • Ideal for printed circuit board • Surge overload rating to 125 Amperes peak • Reliable low cost construction utilizing molded plastic technique results in insexpensive product • UL recognized: File #E 106441 • UL recognized 94V-0 plastic ma

FUJI

富士通

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

MOTOROLA

摩托罗拉

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

MOTOROLA

摩托罗拉

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

MOSPEC

统懋

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

RKBPC802产品属性

  • 类型

    描述

  • 型号

    RKBPC802

  • 制造商

    FUJI

  • 制造商全称

    Fuji Electric

  • 功能描述

    8 AMP FAST RECOVERY BRIDGE RECTIFIER

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