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RJU价格
参考价格:¥0.3900
型号:RJU002N06 品牌:ROHM 备注:这里有RJU多少钱,2025年最近7天走势,今日出价,今日竞价,RJU批发/采购报价,RJU行情走势销售排行榜,RJU报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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RJU | Metal Oxide Resistors, Special Purpose High Power, Ultra High Value 文件:95.93 Kbytes Page:3 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
1250V - 10A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.3Vtyp.(atIF=10A,Tc=25C) FastRecovery(softrecovery) trr=35nstyp.(atIF=10A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 10A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.3Vtyp.(atIF=10A,Tc=25C) FastRecovery(softrecovery) trr=35nstyp.(atIF=10A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 15A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.3Vtyp.(atIF=15A,Tc=25C) FastRecovery(softrecovery) trr=40nstyp.(atIF=15A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 15A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.3Vtyp.(atIF=15A,Tc=25C) FastRecovery(softrecovery) trr=40nstyp.(atIF=15A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 30A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.0Vtyp.(atIF=30A,Tc=25C) FastRecovery(softrecovery) trr=70nstyp.(atIF=30A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 30A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.0Vtyp.(atIF=30A,Tc=25C) FastRecovery(softrecovery) trr=70nstyp.(atIF=30A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 50A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.0Vtyp.(atIF=50A,Tc=25C) FastRecovery(softrecovery) trr=90nstyp.(atIF=50A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 50A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.0Vtyp.(atIF=50A,Tc=25C) FastRecovery(softrecovery) trr=90nstyp.(atIF=50A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 75A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.0Vtyp.(atIF=75A,Tc=25C) FastRecovery(softrecovery) trr=100nstyp.(atIF=75A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 75A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.0Vtyp.(atIF=75A,Tc=25C) FastRecovery(softrecovery) trr=100nstyp.(atIF=75A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 100A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.0Vtyp.(atIF=100A,Tc=25C) FastRecovery(softrecovery) trr=120nstyp.(atIF=100A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 100A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.0Vtyp.(atIF=100A,Tc=25C) FastRecovery(softrecovery) trr=120nstyp.(atIF=100A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 150A - Fast Recovery Diode Features Lowforwardvoltage VF=2.0Vtyp.(atIF=150A,Tc=25C) FastRecovery(softrecovery) trr=155nstyp.(atIF=150A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 150A - Fast Recovery Diode Features Lowforwardvoltage VF=2.0Vtyp.(atIF=150A,Tc=25C) FastRecovery(softrecovery) trr=155nstyp.(atIF=150A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 200A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.0Vtyp.(atIF=200A,Tc=25C) Fastrecovery(softrecovery) trr=165nstyp.(atIF=200A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
1250V - 200A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=2.0Vtyp.(atIF=200A,Tc=25C) Fastrecovery(softrecovery) trr=165nstyp.(atIF=200A,di/dt=1500A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
360V - 10A - Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
360V - 10A - Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
360V - 20A - Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
360V - 20A - Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
360V - 20A - Dual Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=40nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.1Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Dual Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=40nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.1Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
360V - 40A - Dual Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=40nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.1Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Dual Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=40nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.1Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
430V - 10A - Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=23nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.6Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=430V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
430V - 10A - Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=23nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.6Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=430V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.6Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=430V) •Isolatedpackage:TO-220FP(2pin) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.5Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=430V) •Isolatedpackage:TO-220FP(2pin) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=−100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=−100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Ultrafast Recovery Diode FEATURES ·Ultrafastrecoverytime ·Lowforwardvoltage ·Lowreversecurrent APPLICATIONS ·Switchingpowersupply ·Powerswitchingcircuits | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=−100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
600V - 30A - Dual Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
600V - 30A - Dual Diode Ultra Fast Recovery Diode Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Fast Recovery Diode Features •Fastreverserecoverytime:trr=60nstyp.(atIF=3A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=5A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Fast Recovery Diode Features •Fastreverserecoverytime:trr=70nstyp.(atIF=5A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=15A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Fast Recovery Diode Features •Fastreverserecoverytime:trr=70nstyp.(atIF=5A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=15A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Fast Recovery Diode Features •Fastreverserecoverytime:trr=90nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Fast Recovery Diode Features •Fastreverserecoverytime:trr=90nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
600V - 60A - Dual Diode Fast Recovery Diode Features •Fastreverserecoverytime:trr=90nstyp.(atIF=30A,di/dt=100A/μs)perLeg •Lowforwardvoltage:VF=1.4Vtyp.(atIF=30A)perLeg •Lowreversecurrent:IR=1μAmax.(atVR=600V)perLeg | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
600V - 60A - Dual Diode Fast Recovery Diode Features •Fastreverserecoverytime:trr=90nstyp.(atIF=30A,di/dt=100A/μs)perLeg •Lowforwardvoltage:VF=1.4Vtyp.(atIF=30A)perLeg •Lowreversecurrent:IR=1μAmax.(atVR=600V)perLeg | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Fast Recovery Diode Features •Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=−100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Fast Recovery Diode Features •Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=−100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
600V - 50A - Single Diode Fast Recovery Diode Features Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) Fastreverserecoverytime:trr=100nstyp. (atIF=50A,di/dt=100A/s) Lowreversecurrent:IR=1Amax.(atVR=600V) Applications:PFC,Inverter,Converter Qualitygrade:Standard | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
600V - 50A - Single Diode Fast Recovery Diode Features Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) Fastreverserecoverytime:trr=100nstyp. (atIF=50A,di/dt=100A/s) Lowreversecurrent:IR=1Amax.(atVR=600V) Applications:PFC,Inverter,Converter Qualitygrade:Standard | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Single Diode Fast Recovery Diode Features •Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=−100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) •Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
600V - 50A - Dual Diode Super Fast Recovery Diode Features •Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=100A/μs)PerLeg •Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A)PerLeg •Lowreversecurrent:IR=1μAmax.(atVR=600V)PerLeg | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
600V - 50A - Dual Diode Super Fast Recovery Diode Features •Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=100A/μs)PerLeg •Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A)PerLeg •Lowreversecurrent:IR=1μAmax.(atVR=600V)PerLeg | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
600V - 50A - Single Diode Fast Recovery Diode Features Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) Fastreverserecoverytime:trr=100nstyp. (atIF=50A,di/dt=100A/s) Lowreversecurrent:IR=1Amax.(atVR=600V) Applications:PFC,Inverter,Converter Qualitygrade:Standard | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
650V - 50A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=1.55Vtyp.(atIF=50A,Tc=25C) Fastrecovery(softrecovery) trr=70nstyp.(atIF=50A,di/dt=100A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
650V - 75A - Fast Recovery Diode Application: Inverter Features Lowforwardvoltage VF=1.7Vtyp.(atIF=75A,Tc=25C) Fastrecovery(softrecovery) trr=80nstyp.(atIF=75A,di/dt=100A/s,Tc=25C) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |
RJU产品属性
- 类型
描述
- 型号
RJU
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Metal Oxide Resistors, Special Purpose High Power, Ultra High Value
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM/罗姆 |
24+ |
NA/ |
90000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM |
2016+ |
SOT323 |
12489 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM |
24+ |
SOT323 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ROHM |
08+PB |
SOT23 |
2900 |
全新原装进口自己库存优势 |
|||
ROHM |
24+ |
SOT323 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
ROHM |
17+ |
SOT23 |
9988 |
只做原装进口,自己库存 |
|||
ROHM/罗姆 |
1450PB |
SOT323 |
3000 |
||||
ROHM |
SOT-323UM |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ROHM |
23+ |
SOT323 |
999999 |
原装正品现货量大可订货 |
|||
ROHM/罗姆 |
24+ |
SOT-323 |
505348 |
免费送样原盒原包现货一手渠道联系 |
RJU规格书下载地址
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- RJX8FB5HGYEB
- RJX8FB5HGYB
- RJX8FB5HGUEB
- RJX8FB5HGUB
- RJX8FB5HGGEB
- RJX8FB5HGGB
- RJX8FB5HB
- RJX8FB3VB
- RJX8FA5VB
- RJX8FA3VB
- RJW_16
- RJULE-42182-01
- RJULE4218201
- RJU400
- RJU275
- RJU150
- RJU140
- RJU095
- RJU070
- RJU050
- RJU040
- RJU003N03T106
- RJU003N03
- RJU002N06T106
- RJU002N06
- RJS-ST31
- RJSSE558001T
- RJSSE-5381-04
- RJSSE538104
- RJSSE-5381-02T
- RJSSE-5381-02
- RJSSE538102
- RJSSE-5381
- RJSSE5381
- RJSSE-5380-04
- RJSSE538004
- RJSSE-5380-02
- RJSSE538002
- RJSSE-5380
- RJSSE5380
- RJSSE-5081
- RJSSE5081
- RJSSE-5080-04
- RJSSE508004
- RJSSE508002
- RJSSE
- RJSR50E
- RJSNE
- RJSBE
- RJS7R5E
- RJS750
- RJS700
- RJS600
- RJS5-R
- RJS50KE
- RJS500
- RJS4-R
- RJS4K5E
- RJS400
- RJS3-R
- RJS350
- RJS300
- RJS2-R
- RJS250E
- RJS250
RJU数据表相关新闻
RJK0652DPB-00#J5
进口代理
2023-8-25RK2918 ROCKCHIP
www.hfxcom.com
2021-12-9RK3188-T ROCKCHIP
www.hfxcom.com
2021-10-29RK3288
进口原装假一赔十
2020-10-28RJR26FT10CM,RJR26FW101P,RJR26FW
RJR26FT10CM,RJR26FW101P,RJR26FW
2020-5-16RJK03C9DNS-00-J5
RJK03C9DNS-00-J5深圳市拓亿芯电子有限公司,专业代理,分销世界名牌电子元器件,是一家专业化,品牌化的电子元器件,质量第一,诚信经营。
2019-3-7
DdatasheetPDF页码索引
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