RJU价格

参考价格:¥0.3900

型号:RJU002N06 品牌:ROHM 备注:这里有RJU多少钱,2025年最近7天走势,今日出价,今日竞价,RJU批发/采购报价,RJU行情走势销售排行榜,RJU报价。
型号 功能描述 生产厂家&企业 LOGO 操作
RJU

Metal Oxide Resistors, Special Purpose High Power, Ultra High Value

文件:95.93 Kbytes Page:3 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

1250V - 10A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.3Vtyp.(atIF=10A,Tc=25C) FastRecovery(softrecovery) trr=35nstyp.(atIF=10A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 10A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.3Vtyp.(atIF=10A,Tc=25C) FastRecovery(softrecovery) trr=35nstyp.(atIF=10A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 15A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.3Vtyp.(atIF=15A,Tc=25C) FastRecovery(softrecovery) trr=40nstyp.(atIF=15A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 15A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.3Vtyp.(atIF=15A,Tc=25C) FastRecovery(softrecovery) trr=40nstyp.(atIF=15A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 30A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.0Vtyp.(atIF=30A,Tc=25C) FastRecovery(softrecovery) trr=70nstyp.(atIF=30A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 30A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.0Vtyp.(atIF=30A,Tc=25C) FastRecovery(softrecovery) trr=70nstyp.(atIF=30A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 50A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.0Vtyp.(atIF=50A,Tc=25C) FastRecovery(softrecovery) trr=90nstyp.(atIF=50A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 50A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.0Vtyp.(atIF=50A,Tc=25C) FastRecovery(softrecovery) trr=90nstyp.(atIF=50A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 75A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.0Vtyp.(atIF=75A,Tc=25C) FastRecovery(softrecovery) trr=100nstyp.(atIF=75A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 75A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.0Vtyp.(atIF=75A,Tc=25C) FastRecovery(softrecovery) trr=100nstyp.(atIF=75A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 100A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.0Vtyp.(atIF=100A,Tc=25C) FastRecovery(softrecovery) trr=120nstyp.(atIF=100A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 100A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.0Vtyp.(atIF=100A,Tc=25C) FastRecovery(softrecovery) trr=120nstyp.(atIF=100A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 150A - Fast Recovery Diode

Features Lowforwardvoltage VF=2.0Vtyp.(atIF=150A,Tc=25C) FastRecovery(softrecovery) trr=155nstyp.(atIF=150A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 150A - Fast Recovery Diode

Features Lowforwardvoltage VF=2.0Vtyp.(atIF=150A,Tc=25C) FastRecovery(softrecovery) trr=155nstyp.(atIF=150A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 200A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.0Vtyp.(atIF=200A,Tc=25C) Fastrecovery(softrecovery) trr=165nstyp.(atIF=200A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1250V - 200A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=2.0Vtyp.(atIF=200A,Tc=25C) Fastrecovery(softrecovery) trr=165nstyp.(atIF=200A,di/dt=1500A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

360V - 10A - Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=360V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

360V - 10A - Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=360V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

360V - 20A - Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=360V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

360V - 20A - Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=360V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

360V - 20A - Dual Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=40nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.1Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=360V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Dual Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=40nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.1Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=360V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

360V - 40A - Dual Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=40nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.1Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=360V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Dual Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=40nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.1Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=360V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

430V - 10A - Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=23nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.6Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=430V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

430V - 10A - Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=23nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.6Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=430V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.6Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=430V) •Isolatedpackage:TO-220FP(2pin)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.5Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=430V) •Isolatedpackage:TO-220FP(2pin)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=−100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=−100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Ultrafast Recovery Diode

FEATURES ·Ultrafastrecoverytime ·Lowforwardvoltage ·Lowreversecurrent APPLICATIONS ·Switchingpowersupply ·Powerswitchingcircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=−100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

600V - 30A - Dual Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

600V - 30A - Dual Diode Ultra Fast Recovery Diode

Features •Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) •Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Fast Recovery Diode

Features •Fastreverserecoverytime:trr=60nstyp.(atIF=3A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=5A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Fast Recovery Diode

Features •Fastreverserecoverytime:trr=70nstyp.(atIF=5A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=15A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Fast Recovery Diode

Features •Fastreverserecoverytime:trr=70nstyp.(atIF=5A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=15A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Fast Recovery Diode

Features •Fastreverserecoverytime:trr=90nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Fast Recovery Diode

Features •Fastreverserecoverytime:trr=90nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=30A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

600V - 60A - Dual Diode Fast Recovery Diode

Features •Fastreverserecoverytime:trr=90nstyp.(atIF=30A,di/dt=100A/μs)perLeg •Lowforwardvoltage:VF=1.4Vtyp.(atIF=30A)perLeg •Lowreversecurrent:IR=1μAmax.(atVR=600V)perLeg

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

600V - 60A - Dual Diode Fast Recovery Diode

Features •Fastreverserecoverytime:trr=90nstyp.(atIF=30A,di/dt=100A/μs)perLeg •Lowforwardvoltage:VF=1.4Vtyp.(atIF=30A)perLeg •Lowreversecurrent:IR=1μAmax.(atVR=600V)perLeg

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Fast Recovery Diode

Features •Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=−100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Fast Recovery Diode

Features •Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=−100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

600V - 50A - Single Diode Fast Recovery Diode

Features Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) Fastreverserecoverytime:trr=100nstyp. (atIF=50A,di/dt=100A/s) Lowreversecurrent:IR=1Amax.(atVR=600V) Applications:PFC,Inverter,Converter Qualitygrade:Standard

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

600V - 50A - Single Diode Fast Recovery Diode

Features Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) Fastreverserecoverytime:trr=100nstyp. (atIF=50A,di/dt=100A/s) Lowreversecurrent:IR=1Amax.(atVR=600V) Applications:PFC,Inverter,Converter Qualitygrade:Standard

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Single Diode Fast Recovery Diode

Features •Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=−100A/μs) •Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) •Lowreversecurrent:IR=1μAmax.(atVR=600V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

600V - 50A - Dual Diode Super Fast Recovery Diode

Features •Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=100A/μs)PerLeg •Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A)PerLeg •Lowreversecurrent:IR=1μAmax.(atVR=600V)PerLeg

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

600V - 50A - Dual Diode Super Fast Recovery Diode

Features •Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=100A/μs)PerLeg •Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A)PerLeg •Lowreversecurrent:IR=1μAmax.(atVR=600V)PerLeg

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

600V - 50A - Single Diode Fast Recovery Diode

Features Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) Fastreverserecoverytime:trr=100nstyp. (atIF=50A,di/dt=100A/s) Lowreversecurrent:IR=1Amax.(atVR=600V) Applications:PFC,Inverter,Converter Qualitygrade:Standard

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

650V - 50A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=1.55Vtyp.(atIF=50A,Tc=25C) Fastrecovery(softrecovery) trr=70nstyp.(atIF=50A,di/dt=100A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

650V - 75A - Fast Recovery Diode Application: Inverter

Features Lowforwardvoltage VF=1.7Vtyp.(atIF=75A,Tc=25C) Fastrecovery(softrecovery) trr=80nstyp.(atIF=75A,di/dt=100A/s,Tc=25C)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

RJU产品属性

  • 类型

    描述

  • 型号

    RJU

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Metal Oxide Resistors, Special Purpose High Power, Ultra High Value

更新时间:2025-7-29 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
24+
NA/
90000
优势代理渠道,原装正品,可全系列订货开增值税票
ROHM
2016+
SOT323
12489
只做原装,假一罚十,公司可开17%增值税发票!
ROHM
24+
SOT323
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ROHM
08+PB
SOT23
2900
全新原装进口自己库存优势
ROHM
24+
SOT323
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ROHM
17+
SOT23
9988
只做原装进口,自己库存
ROHM/罗姆
1450PB
SOT323
3000
ROHM
SOT-323UM
185600
一级代理 原装正品假一罚十价格优势长期供货
ROHM
23+
SOT323
999999
原装正品现货量大可订货
ROHM/罗姆
24+
SOT-323
505348
免费送样原盒原包现货一手渠道联系

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