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位置：首页 > IC中文资料第745页 > RJH

RJH晶体管资料

  • RJH6674别名：RJH6674三极管、RJH6674晶体管、RJH6674晶体三极管

  • RJH6674生产厂家：美国无线电公司

  • RJH6674制作材料：Si-NPN

  • RJH6674性质：功率开关 （PSW）

  • RJH6674封装形式：直插封装

  • RJH6674极限工作电压：

  • RJH6674最大电流允许值：15A

  • RJH6674最大工作频率：<1MHZ或未知

  • RJH6674引脚数：3

  • RJH6674最大耗散功率：175W

  • RJH6674放大倍数：

  • RJH6674图片代号：B-70

  • RJH6674vtest：0

  • RJH6674htest：999900

  • RJH6674atest：15

  • RJH6674wtest：175

  • RJH6674代换 RJH6674用什么型号代替：

RJH价格

参考价格：￥14.6752

型号：RJH1CV5DPK-00#T0 品牌：Renesas 备注：这里有RJH多少钱，2025年最近7天走势，今日出价，今日竞价，RJH批发/采购报价，RJH行情走势销售排行榜，RJH报价。
型号 功能描述 生产厂家&企业 LOGO 操作
RJH

Z Series — Low Profile Unfiltered Modular Jack

文件：601.24 Kbytes Page：6 Pages

AGELECTRONICA

AG Electronica

AGELECTRONICA
RJH1CV5DPK

1200V - 25A - IGBT Application: Inverter

Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.8Vtyp.(atIC=25A,VGE=15V,Ta=25°C) Built-infastrecoverydiode(trr=170nstyp.)inonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH30

Silicon N Channel IGBT High speed power switching

Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Highspeedswitching:tr=80nstyp.,tf=150nstyp. ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. ●Lowleakcurrent:ICES=1μAmax. ●Built-inFastRecoveryDiode:VF=1.4Vtyp.,trr=23nstyp.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH30E2

Silicon N Channel IGBT High speed power switching

Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Highspeedswitching:tr=80nstyp.,tf=150nstyp. ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. ●Lowleakcurrent:ICES=1μAmax. ●Built-inFastRecoveryDiode:VF=1.4Vtyp.,trr=23nstyp.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH30H1DPP-M0

Silicon N Channel IGBT High speed power switching

Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Highspeedswitching:tr=80nstyp.,tf=150nstyp. ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. ●Lowleakcurrent:ICES=1μAmax. ●Built-inFastRecoveryDiode:VF=1.4Vtyp.,trr=23nstyp.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH30H2DPK-M0

Silicon N Channel IGBT High speed power switching

Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.4Vtyp ●Highspeedswitching:tr=100nstyp,tf=180nstyp ●Lowleakcurrent:ICES=1Amax ●Built-inFastRecoveryDiode:VF=1.4Vtyp,trr=23nstyp

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH3347

Silicon N Channel IGBT High speed power switching

Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Highspeedswitching:tr=80nstyp.,tf=150nstyp. ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.5Vtyp. ●Lowleakcurrent:ICES=1μAmax. ●Built-inFastRecoveryDiode:VF=1.4Vtyp.,trr=23nstyp.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH6086BDPK

600 V - 45 A - IGBT High Speed Power Switching

Features •Ultrahighspeedswitching tf=36nstyp.(atIC=30A,VCC=300V,VGE=15V,Rg=5Ω,InductiveLoad) •Lowon-statevoltage •Fastrecoverydiode

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH6087BDPK

Silicon N Channel IGBT High Speed Power Switching

Features •Ultrahighspeedswitching tf=55nstyp.(atIC=30A,VCC=300V,VGE=15V,Rg=5Ω,InductiveLoad) •Lowon-statevoltage •Fastrecoverydiode

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH6088BDPK

Silicon N Channel IGBT High Speed Power Switching

Features •Ultrahighspeedswitching tf=60nstyp.(atIC=40A,VCC=300V,VGE=15V,Rg=5Ω,InductiveLoad) •Lowon-statevoltage •Fastrecoverydiode

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60A83RDPE

600V - 10A - IGBT Application: Inverter

Features ReverseconductingIGBTwithmonolithicdiode Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=2.1Vtyp.(atIC=10A,VGE=15V,Ta=25°C) Built-infastrecoverydiode(trr=130nstyp.)inonepackage Trenchgateandth

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60A83RDPP-M0

600V - 10A - IGBT Application: Inverter

Features ReverseconductingIGBTwithmonolithicdiode Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=2.1Vtyp.(atIC=10A,VGE=15V,Ta=25°C) Built-infastrecoverydiode(trr=130nstyp.)inonepackage Trenchgateandth

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60A85RDPE

600V - 15A - IGBT Application: Inverter

Features ReverseconductingIGBTwithmonolithicdiode Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.5Vtyp.(atIC=15A,VGE=15V,Ta=25°C) Built-infastrecoverydiode(trr=160nstyp.)inonepackage Trenchgateandth

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60A85RDPP-M0

600V - 15A - IGBT Application: Inverter

Features ReverseconductingIGBTwithmonolithicdiode Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.5Vtyp.(atIC=15A,VGE=15V,Ta=25°C) Built-infastrecoverydiode(trr=160nstyp.)inonepackage Trenchgateandth

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60C9DPD

Silicon N Channel IGBT Application: Inverter

SiliconNChannelIGBTApplication:Inverter Features •Highbreakdown-voltage •Lowon-voltage •Built-indiode

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60C9DPD-00-J2

Silicon N Channel IGBT Application: Inverter

SiliconNChannelIGBTApplication:Inverter Features •Highbreakdown-voltage •Lowon-voltage •Built-indiode

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D0DPK

Silicon N Channel IGBT Application: Inverter

Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D0DPK

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.2V@IC=22A ·HighCurrentCapability ·HighInputImpedance APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
RJH60D0DPK-00-T0

Silicon N Channel IGBT Application: Inverter

Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D0DPM

Silicon N Channel IGBT Application: Inverter

Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D0DPQ-A0

600 V - 22 A - IGBT Application: Inverter

Features •Shortcircuitwithstandtime(5styp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D0DPQ-E0

600V - 22A - IGBT Application: Inverter

Features •Shortcircuitwithstandtime(5styp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D0DPQ-E0-T2

600V - 22A - IGBT Application: Inverter

Features •Shortcircuitwithstandtime(5styp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D1DPE

Silicon N Channel IGBT Application: Inverter

Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.9Vtyp.(atIC=10A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D1DPE-00-J3

Silicon N Channel IGBT Application: Inverter

Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.9Vtyp.(atIC=10A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D1DPP-E0

600V - 10A - IGBT Application: Inverter

Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.9Vtyp.(atIC=10A,VGE=15V,Ta=25°C) Builtinfastrecoverydiode(70nstyp.)inonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=75ns

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D1DPP-M0

Silicon N Channel IGBT Application: Inverter

Features ●Shortcircuitwithstandtime(5styp.) ●Lowcollectortoemittersaturationvoltage VCE(sat)=1.9Vtyp.(atIC=10A,VGE=15V,Ta=25°C) ●Builtinfastrecoverydiode(70nstyp.)inonepackage ●Trenchgateandthinwafertechnology ●Highspeedswitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D1DPP-M0-T2

Silicon N Channel IGBT Application: Inverter

Features ●Shortcircuitwithstandtime(5styp.) ●Lowcollectortoemittersaturationvoltage VCE(sat)=1.9Vtyp.(atIC=10A,VGE=15V,Ta=25°C) ●Builtinfastrecoverydiode(70nstyp.)inonepackage ●Trenchgateandthinwafertechnology ●Highspeedswitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D2DPE

Silicon N Channel IGBT Application: Inverter

Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.7Vtyp.(atIC=12A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D2DPE-00-J3

Silicon N Channel IGBT Application: Inverter

Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.7Vtyp.(atIC=12A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D2DPP-E0

600V - 12A - IGBT Application: Inverter

Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.7Vtyp.(atIC=12A,VGE=15V,Ta=25°C) Builtinfastrecoverydiode(100nstyp.)inonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=80ns

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D2DPP-M0

Silicon N Channel IGBT cation: Inverter

SiliconNChannelIGBTApplication:Inverter Features Shortcircuitwithstandtime(5µstyp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.7Vtyp.(atIC=12A,VGE=15V,Ta=25°C) Builtinfastrecoverydiode(100nstyp.)inonepackage Trenchgateandthinwa

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D2DPP-M0-T2

Silicon N Channel IGBT cation: Inverter

SiliconNChannelIGBTApplication:Inverter Features Shortcircuitwithstandtime(5µstyp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.7Vtyp.(atIC=12A,VGE=15V,Ta=25°C) Builtinfastrecoverydiode(100nstyp.)inonepackage Trenchgateandthinwa

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D3DPE

Silicon N Channel IGBT Application: Inverter

Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=17A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D3DPE-00-J3

Silicon N Channel IGBT Application: Inverter

Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=17A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60D7BDPQ-E0

600V - 50A - IGBT Application: Inverter

Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=50A,VGE=15V,Ta=25°C) Builtinfastrecoverydiode(25nstyp.)inonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=50ns

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F0DPK

Silicon N Channel IGBT High Speed Power Switching

Features •LowcollectortoemittersaturationvoltageVCE(sat)=1.4Vtyp.(atIC=25A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitchingtf=90nstyp.(atIC=30A,VCC=400V,VGE=15V,Rg=5Ω,Ta=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F0DPK-00-T0

Silicon N Channel IGBT High Speed Power Switching

Features •LowcollectortoemittersaturationvoltageVCE(sat)=1.4Vtyp.(atIC=25A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitchingtf=90nstyp.(atIC=30A,VCC=400V,VGE=15V,Rg=5Ω,Ta=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F0DPQ-A0

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(atIC=25A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=90nstyp.(atIC=30A,VCC=400V,VGE=15V,Rg=5

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F0DPQ-A0-T0

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(atIC=25A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=90nstyp.(atIC=30A,VCC=400V,VGE=15V,Rg=5

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F3DPK

Silicon N Channel IGBT High Speed Power Switching

Features ●Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(IC=20A,VGE=15V,Ta=25°C) ●Builtinfastrecoverydiodeinonepackage ●Trenchgateandthinwafertechnology ●Highspeedswitching tf=92nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F3DPQ-A0

600 V - 20 A - IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(IC=20A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=92nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F4DPK

Silicon N Channel IGBT High Speed Power Switching

SiliconNChannelIGBTHighSpeedPowerSwitching Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(atIC=30A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=80nstyp.(atIC=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F4DPK-00-T0

Silicon N Channel IGBT High Speed Power Switching

SiliconNChannelIGBTHighSpeedPowerSwitching Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(atIC=30A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=80nstyp.(atIC=

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F4DPQ-A0

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(atIC=30A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=80nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω,Ta

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F4DPQ-A0-T0

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.4Vtyp.(atIC=30A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=80nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω,Ta

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F5

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tr=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F5BDPQ-A0

600V - 40A - IGBT High Speed Power Switching

Features ●Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) ●Builtinfastrecoverydiodeinonepackage ●Trenchgateandthinwafertechnology ●Highspeedswitching tf=68nstyp.(atIC=30A,VCE=400V,VGE=1

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F5DPK

Silicon N Channel IGBT High Speed Power Switching

Features •Highspeedswitching •Lowon-statevoltage •Fastrecoverydiode

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F5DPK-00-T0

Silicon N Channel IGBT High Speed Power Switching

Features •Highspeedswitching •Lowon-statevoltage •Fastrecoverydiode

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F5DPQ-A0

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tr=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F5DPQ-A0-T0

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.37Vtyp.(IC=40A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tr=85nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F6BDPQ-A0

600V - 45A - IGBT High Speed Power Switching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=45A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F6DPK

Silicon N Channel IGBT High Speed Power Switching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=45A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=95nstyp.(atIC=30A,ResistiveLoad,VCC=300V,VGE=15V,Rg=5Ω

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F6DPK-00-T0

Silicon N Channel IGBT High Speed Power Switching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=45A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=95nstyp.(atIC=30A,ResistiveLoad,VCC=300V,VGE=15V,Rg=5Ω

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F6DPQ-A0

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=45A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F6DPQ-A0-T0

Silicon N Channel IGBT High Speed Power Switching

Features •Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=45A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiodeinonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg=5Ω

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F7

Silicon N Channel IGBT High Speed Power Switching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=50A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F7ADPK

Silicon N Channel IGBT High Speed Power Switching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=50A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
RJH60F7ADPK-00-T0

Silicon N Channel IGBT High Speed Power Switching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=50A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

RJH产品属性

  • 类型

    描述

  • 型号

    RJH

  • 制造商

    ELNA America Inc

  • 功能描述

    CAPACITOR 4700UF 16V

RJH供应商更多...

更新时间：2025-8-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
RJH3047
Renesas(瑞萨)
24+
标准封装
9908
支持大陆交货,美金交易。原装现货库存。
询价
深圳市凌旭科技有限公司
RJH60D1DPP-M0#T2
RENESAS
2016+
TO220
3810
只做原装,假一罚十,公司可开17%增值税发票!
询价
中天科工半导体（深圳）有限公司
RJH60F7DPQ-A0#T0
RENESAS/瑞萨
25+
TO-247
32360
RENESAS/瑞萨全新特价RJH60F7DPQ-A0#T0即刻询购立享优惠#长期有货
询价
深圳市科恒伟业电子有限公司
RJH60D0DPM-00
RENESAS
2430+
TO-3PFM
8540
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市永贝尔科技有限公司
RJHSE-5381
Amphenol(安费诺)
2023+
N/A
4550
全新原装正品
询价
深圳市正迈科技有限公司
RJH60F5DPQ-A0
RENESAS□□□
23+
TO247
10010
原装进口瑞萨代理经销正迈科技QQ1304306553
询价
深圳市航润创能电子集团有限公司
RJH60D0DPK
瑞萨
14
N/A
360
只做原装
询价
深圳市明嘉莱科技有限公司
RJH60D0DPK
RENESAS
25+
TO-3P
518000
明嘉莱只做原装正品现货
询价
深圳市昌和盛利电子有限公司
RJH60F5DPK
RENESAS原装正品专卖
23+
TO-247
280000
专注原装正品现货特价中量大可定
询价
深圳市得捷芯城科技有限公司
RJHSE-5381
Amphenol(安费诺)
24+
N/A
7049
原厂可订货,技术支持,直接渠道。可签保供合同
询价

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DdatasheetPDF页码索引

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