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型号 功能描述 生产厂家 企业 LOGO 操作
RFP50N05

50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching r

INTERSIL

RFP50N05

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RFP50N05

Trans MOSFET N-CH 50V 50A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) drivi • 50A, 50V\n• rDS(ON) = 0.022Ω\n• UIS SOA Rating Curve (Single Pulse)\n• Design Optimized for 5V Gate Drive\n• Can be Driven Directly from CMOS, NMOS, TTL Circuits\n• Compatible with Automotive Drive Requirements\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer C;

ONSEMI

安森美半导体

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri

INTERSIL

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri

FAIRCHILD

仙童半导体

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

文件:157.61 Kbytes Page:6 Pages

AUSTIN

50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching r

INTERSIL

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri

FAIRCHILD

仙童半导体

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri

INTERSIL

RFP50N05产品属性

  • 类型

    描述

  • Maximum Drain Source Voltage:

    50V

  • Maximum Continuous Drain Current:

    50A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

更新时间:2026-8-3 17:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTESIL
25+
TO-220
8000
专做原装正品,假一罚百!
INTERSIL/FSC
26+
TO-220
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
TI
25+
TO-220AB
11528
样件支持,可原厂排单订货!
FAIRCHILD
12+
TO-220
150
全新 发货1-2天
INTERSIL
17+
TO-220
6200
24+
6520
FSC
26+
TO-92
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
FSC
23+
TO-220
2650
原厂原装正品
Fairchild/ON
22+
TO2203
9000
原厂渠道,现货配单
FAIRCHILD/仙童
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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