15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Single Phase 15.0 AMPS. Glass Passivated Bridge Rectifiers

Voltage Range 50 to 1000 Volts Current 15.0 Amperes Features UL Recognized File # E-96005 Glass passivated junction Ideal for printed circuit board Reliable low cost construction Plastic material has Underwriters Laboratory Flammability Classification 94V-0 Surge overload

Single Phase 15.0 AMPS. Glass Passivated Bridge Rectifiers

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