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RFM价格
参考价格:¥10.7230
型号:RFM01U7P(TE12L,F) 品牌:Toshiba 备注:这里有RFM多少钱,2024年最近7天走势,今日出价,今日竞价,RFM批发/采购报价,RFM行情走势销售排行榜,RFM报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
RFM | Non-Inductive High Frequency Melf Resistors 文件:439.19 Kbytes Page:5 Pages | TOKENToken Electronics Industry Co., Ltd. 德通电子德通电子工业有限公司 | ||
RFM | 1 Watt SIP4 Single Output 文件:444.2 Kbytes Page:4 Pages | RECOMRecom International Power 瑞科电源瑞科电源有限公司 | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Field Effect Transistor Silicon N Channel MOS Type VHF-andUHF-bandAmplifierApplications (Note)TheTOSHIBAproductslistedinthisdocumentareintendedforhigh frequencyPowerAmplifieroftelecommunicationsequipment..These TOSHIBAproductsareneitherintendednorwarrantedforanyotheruse. DonotusetheseTOSHIBAproductslistedi | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type VHF-andUHF-bandAmplifierApplications (Note)TheTOSHIBAproductslistedinthisdocumentareintendedforhighfrequencyPowerAmplifieroftelecommunicationsequipment.TheseTOSHIBAproductsareneitherintendednorwarrantedforanyotheruse.DonotusetheseTOSHIBAproductslistedinthi | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | |||
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | |||
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS P-ChannelEnhancement-ModePowerField-EffectTransistors Features: ■SOAispower-dissipationlimited ■Nanosecondeswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | |||
P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS P-ChannelEnhancement-ModePowerField-EffectTransistors Features: ■SOAispower-dissipationlimited ■Nanosecondeswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | |||
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-Channel Logic Level Power Field-Effect Transistors (L2 FET) TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
N-Channel Logic Level Power Field-Effect Transistors (L2 FET) TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
N-Channel Enhancement Mode Power Field Effect Transistors
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedriv | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
N-Channel Enhancement Mode Power Field Effect Transistors
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
POWER LOGIC LEVEL MOSFETS [GESOLIDSTATE] POWERLOGICLEVELMOSFETS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
POWER LOGIC LEVEL MOSFETS [GESOLIDSTATE] POWERLOGICLEVELMOSFETS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
POWER LOGIC LEVEL MOSFETS [GESOLIDSTATE] POWERLOGICLEVELMOSFETS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
RFM SERIES FEATURES Switchingcapacityupto35A QuickconnectandPCboardmountingareallavailable 1fromAand1fromCarrangement Suitableforautomationsystemandautomobileauxiliaryetc... | SUNHOLDShanghe Motor Co. , Ltd. 上和电机上和电机股份有限公司 | |||
3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs TheseareN-channelenhancement-modesilicon-gatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drivepower.These | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs TheseareN-channelenhancement-modesilicon-gatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drivepower.These | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedand | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS [GESOLIDSTATE] | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS [GESOLIDSTATE] | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |
RFM产品属性
- 类型
描述
- 型号
RFM
- 制造商
Amphenol PCD
- 功能描述
INSERTION TOOL - Bulk
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA |
2023+ |
SOT-343/USQ |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
TOSHIBA |
21+ |
SOT343 |
50000 |
全新原装正品现货,支持订货 |
|||
hoperf |
dc08 |
原厂封装 |
1440 |
INSTOCK:80/box |
|||
HOPERF/华普微 |
23+ |
MODULE |
89653 |
代理全新原装假一罚十 |
|||
RF |
SO-10 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
TOSHIBA/东芝 |
23+ |
SOT-343 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
TOSHIBA/东芝 |
23+ |
NA/ |
3340 |
原厂直销,现货供应,账期支持! |
|||
TOSHIBA/东芝 |
SOT-343 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
TOSHIBA/东芝 |
23+ |
SOT343 |
9000 |
进口原装现货支持实单欢迎来电 |
|||
华普 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
RFM规格书下载地址
RFM参数引脚图相关
- s9018
- s9015
- s9014
- s9013
- s8550
- s8050三极管
- s8050
- s7-200
- s7200
- s5230
- s510b
- s1100
- s101
- s007
- rtl8100c
- rs触发器
- rohs指令
- ROHS
- ricoh
- rf开关
- RFP12N10L
- RFN-7668
- RFN-7652
- RFN-7649
- RFN-7648
- RFN-7642
- RFN30TS6DGC11
- RFN20NS6STL
- RFN1L7STE25
- RFN1L6STE25
- RFN10B3STL
- RFM68W-868S2
- RFM68W-433-S2
- RFM67W-868S2
- RFM67W-433S2
- RFM5P15
- RFM5P12
- RFM50
- RFM4N40
- RFM4N35
- RFM42B
- RFM3N50
- RFM3N45
- RFM31B
- RFM26W-1D28
- RFM26W
- RFM24W
- RFM23BP
- RFM12U7X(TE12L,Q)
- RFM12BP
- RFM12B
- RFM119W
- RFM119B
- RFM117
- RFM110
- RFM08U9X(TE12L,Q)
- RFM03U3CT(TE12L)
- RFM02
- RFM01U7P(TE12L,F)
- RFM01
- RFLW5N
- RFLW3N
- RFLPF2012090K0T
- RFLPF1608060A07B1U
- RFLABKIT-001
- RFL8
- RFL6000
- RFL6
- RFL4N15
- RFL4N12
- RFL-4
- RFL2N06
- RFL2N05
- RFL-2BK
- RFL-2
- RFL1P10
- RFL1P08
- RFL1N20
- RFL1N18
- RFL1N15
- RFL1N12
- RFL1N10
- RFL1N08
- RFL-1BK
- RFL-1
- RFIDTAGPALLET
- RFIDTAGBAG
- RFIDR-GM-366
- RFID125-STI-5
- RFID125-KEY-5
- RFID125-ISO-5
- RFI97-13
- RFI95-14
- RFI95-13
- RFI77-6
- RFI77-2
- RFI75-6
- RFI75-4-D3
- RFI75-4-D2
- RFI75-4
RFM数据表相关新闻
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2021-2-3RF-HDT-DVBB-N2 包覆成型应答器 RFID发射应答器
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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