isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

TMOS POWER FET 75 AMPERES 50 VOLTS

HDTMOS E-FET™ High Enegy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount component

TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS

HDTMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy–efficient design also offers a drain–to–source diode with a fast rec

75A, 50V, 0.008 Ohm, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

文件：75.94 Kbytes Page：8 Pages

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

文件：75.94 Kbytes Page：8 Pages