位置：首页 > IC中文资料第4482页 > RFG5N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power Field Effect Transistors Power Field Effect Transistors N-Channel Enhancement Mode Silicon Gate DPAK for Surface Mount or Insertion Mount | MOTOROLA 摩托罗拉 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT MODE SILICON GATE 文件：112.54 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
丝印代码：5N06；N-Channel Enhancement Mode Power MOSFET 文件：339.17 Kbytes Page：4 Pages | SECOS 喜可士 | |
RFG5N06产品属性
- 类型
描述
- 型号
RFG5N06
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NOVATEK |
2016+ |
TQFP64 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NOVATEK |
26+ |
QFP |
20000 |
公司只有正品,实单来谈 |
|||
MSTAR |
20+ |
TQFP100 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
MSTAR/晨星半导体 |
23+ |
38SSOP |
12500 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
NOVATEK |
25+ |
QFP |
98192 |
一站式BOM配单 |
|||
MTD |
23+ |
TSSOP38 |
50000 |
全新原装正品现货,支持订货 |
|||
MTD |
26+ |
TSSOP38 |
18000 |
原装正品,可配单,支持实单 |
|||
NOVATEK |
23+ |
QFP |
98900 |
原厂原装正品现货!! |
|||
NOVATEK |
25+ |
QFP |
18000 |
原装正品,全新来谈 |
|||
MTD |
22+ |
TSSOP38 |
20000 |
公司只做原装 品质保障 |
RFG5N06规格书下载地址
RFG5N06参数引脚图相关
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- RFGA2012
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2019-3-14
DdatasheetPDF页码索引
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