14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 mΩ

Features • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE® Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175 o C Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface

N-Channel 60 V (D-S) MOSFET

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