Quad-Band GSM, Linear EDGE Transmit Module with Fourteen High Linearity TRX Switch Ports

Features ■ GSM and Linear EDGE Transmit ■ Fourteen High Linearity TRX Ports ■ MIPI RFFE Digital Control ■ Low RF Switch Port Loss ■ Few External Components Required ■ 8kV ESD Protection in a Handset Application ■ -1dBm to 6dBm Drive Level Applications ■ WEDGE Handsets and Connected

Q-Band 4-Stage Driver Amplifier

DESCRIPTION The MGFC5216 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Middle Power Amplifier (MPA) . FEATURES ● RF frequency : 37.0 to 43.0 GHz ● Linear gain : 20dB (TYP.)@ 37 to 40 GHz 20 dB(TYP.) @ 40 to 43 GHz ● P1dB : ³ 16 dBm(min.) @ 37 to 40 GHz ³ 16 dBm(target) @ 40

Dual Bias Resistor Trasnsistors

Dual Bias Resistor Trasnsistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digit

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

Smart Quad Channel Low-Side Switch

Features • Overload protection • Short circuit protection • Cascadeable serial diagnostic interface • Overvoltage protection • µC compatible input • Electrostatic discharge (ESD) protection Application • All kinds of resistive and inductive loads (relays, electromagnetic valves) • µC comp

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing