CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz

Product Description The RF3816 is a high-performance InGaP/GaAs general purpose RF and microwave gain block amplifier. This 50Ω amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for many small-signal applications. Designed with an external bias resistor, the RF38

CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz

CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz

Product Description The RF3816 is a high-performance InGaP/GaAs general purpose RF and microwave gain block amplifier. This 50Ω amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for many small-signal applications. Designed with an external bias resistor, the RF38

CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz

Product Description The RF3816 is a high-performance InGaP/GaAs general purpose RF and microwave gain block amplifier. This 50Ω amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for many small-signal applications. Designed with an external bias resistor, the RF38

CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz

Product Description The RF3816 is a high-performance InGaP/GaAs general purpose RF and microwave gain block amplifier. This 50Ω amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for many small-signal applications. Designed with an external bias resistor, the RF38

CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz

Product Description The RF3816 is a high-performance InGaP/GaAs general purpose RF and microwave gain block amplifier. This 50Ω amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for many small-signal applications. Designed with an external bias resistor, the RF38

Dual N-Channel 20-V (D-S) MOSFET

Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON3816/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. AON3816 and AO3816L are electrica

Circuit Playground Bolt-On Kit

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20V N-Channel MOSFET

文件：374.69 Kbytes Page：5 Pages

2횞15W Filterless Low EMI Stereo Class D Audio Power Amplifier

文件：438.5 Kbytes Page：9 Pages