位置：首页 > IC中文资料第7856页 > RF3809
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RF3809 | GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3809 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 |   | |
RF3809 | GaAs HBT PRE-DRIVER AMPLIFIER 文件：809.68 Kbytes Page：22 Pages | RFMD 威讯联合 | | |
RF3809 | GaAs HBT PRE-DRIVER AMPLIFIER | QORVO 威讯联合 | | |
GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3809 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | | ||
GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3809 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | | ||
GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3809 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | | ||
GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3809 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | | ||
GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3809 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | | ||
GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3809 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | | ||
GaAs HBT PRE-DRIVER AMPLIFIER 文件：809.68 Kbytes Page：22 Pages | RFMD 威讯联合 | | ||
GaAs HBT PRE-DRIVER AMPLIFIER 文件：809.68 Kbytes Page：22 Pages | RFMD 威讯联合 | | ||
GaAs HBT PRE-DRIVER AMPLIFIER 文件：809.68 Kbytes Page：22 Pages | RFMD 威讯联合 | | ||
GaAs HBT PRE-DRIVER AMPLIFIER 文件：809.68 Kbytes Page：22 Pages | RFMD 威讯联合 | | ||
GaAs HBT PRE-DRIVER AMPLIFIER 文件：809.68 Kbytes Page：22 Pages | RFMD 威讯联合 | | ||
GaAs HBT PRE-DRIVER AMPLIFIER 文件：809.68 Kbytes Page：22 Pages | RFMD 威讯联合 | | ||
GaAs HBT PRE-DRIVER AMPLIFIER 文件：809.68 Kbytes Page：22 Pages | RFMD 威讯联合 | | ||
SURFACE MOUNT ZENER DIODE Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering | GE | | ||
SURFACE MOUNT ZENER DIODE Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering | GE | | ||
SURFACE MOUNT ZENER DIODE Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering | GE | | ||
IC for CMOS System Reset Monolithic IC 文件：66.6 Kbytes Page：10 Pages | MITSUMI 三美 | |
RF3809产品属性
- 类型
描述
- 型号
RF3809
- 制造商
RFMD
- 制造商全称
RF Micro Devices
- 功能描述
GaAs HBT PRE-DRIVER AMPLIFIER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RFMD |
25+ |
54 |
公司优势库存 热卖中! |
||||
RFMD/威讯 |
25+ |
SOP8 |
12496 |
RFMD/威讯原装正品RF3809TR13即刻询购立享优惠#长期有货 |
|||
RFMD |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
|||
RFMD |
08+ |
假一赔十 |
4 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RFMD |
24+ |
SOP-8 |
2000 |
全新原装深圳仓库现货有单必成 |
|||
RFMD |
21+ |
SOP-8 |
5000 |
绝对公司现货,不止网上数量!原装正品,假一赔十! |
|||
RFMD |
23+ |
8-SOIC |
65480 |
||||
RFMD |
25+ |
SMD |
2789 |
全新原装自家现货!价格优势! |
|||
RFMD |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
QORVO |
2223+ |
QFN |
26800 |
只做原装正品假一赔十为客户做到零风险 |
RF3809规格书下载地址
RF3809参数引脚图相关
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2019-5-11
DdatasheetPDF页码索引
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