位置:首页 > IC中文资料第6392页 > RF3807
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RF3807 | GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3807 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | ||
RF3807 | GaAs HBT PRE-DRIVER AMPLIFIER 文件:781.97 Kbytes Page:20 Pages | RFMD 威讯联合 | ||
RF3807 | GaAs HBT PRE-DRIVER AMPLIFIER | QORVO 威讯联合 | ||
GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3807 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | |||
GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3807 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | |||
GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3807 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | |||
GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3807 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | |||
GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3807 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | |||
GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3807 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF38 | RFMD 威讯联合 | |||
GaAs HBT PRE-DRIVER AMPLIFIER 文件:781.97 Kbytes Page:20 Pages | RFMD 威讯联合 | |||
GaAs HBT PRE-DRIVER AMPLIFIER 文件:781.97 Kbytes Page:20 Pages | RFMD 威讯联合 | |||
GaAs HBT PRE-DRIVER AMPLIFIER 文件:781.97 Kbytes Page:20 Pages | RFMD 威讯联合 | |||
GaAs HBT PRE-DRIVER AMPLIFIER 文件:781.97 Kbytes Page:20 Pages | RFMD 威讯联合 | |||
GaAs HBT PRE-DRIVER AMPLIFIER 文件:781.97 Kbytes Page:20 Pages | RFMD 威讯联合 | |||
GaAs HBT PRE-DRIVER AMPLIFIER 文件:781.97 Kbytes Page:20 Pages | RFMD 威讯联合 | |||
GaAs HBT PRE-DRIVER AMPLIFIER 文件:781.97 Kbytes Page:20 Pages | RFMD 威讯联合 | |||
Power Management Switching IC (with flash memory power switching function) DESCRIPTION When data is written to or read from flash memory, it requires that the voltage at its power supply (VPP) be switched (to 12 V for writing and to 3.3 or 5.0 V for reading). The MB3807A is a power management switching IC, designed to be compatible with the PCMCIA digital controller, t | FUJITSU 富士通 | |||
SURFACE MOUNT ZENER DIODE Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering | GE | |||
SURFACE MOUNT ZENER DIODE Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering | GE | |||
SURFACE MOUNT ZENER DIODE Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering | GE | |||
SURFACE MOUNT ZENER DIODE Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering | GE |
RF3807产品属性
- 类型
描述
- 型号
RF3807
- 制造商
RFMD
- 制造商全称
RF Micro Devices
- 功能描述
GaAs HBT PRE-DRIVER AMPLIFIER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RFMD |
2016+ |
SOP-8 |
2600 |
本公司只做原装,假一罚十,可开17%增值税发票! |
|||
RFMD |
24+ |
SOP8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RFMD |
08+ |
SOP8 |
2468 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RFMD |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
RFMD |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
RFMD |
22+ |
SOP8 |
5000 |
只做原装鄙视假货15118075546 |
|||
23+ |
SOP-8 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
RFMD |
25+ |
SOP-8 |
10500 |
全新原装现货,假一赔十 |
|||
RFMD |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RFMD |
25+23+ |
SOIC8 |
27945 |
绝对原装正品全新进口深圳现货 |
RF3807规格书下载地址
RF3807参数引脚图相关
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RF3807数据表相关新闻
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2019-5-11
DdatasheetPDF页码索引
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