DUAL-BAND 3V LOW NOISE AMPLIFIER

Product Description The RF2363 is a dual-band Low Noise Amplifier designed for use as a front-end for 950MHz GSM/1850MHz DCS applications and may be used for dual-band cellular/PCS applications. The 900MHz LNA is a single-stage amplifier; the 1900MHz LNA is a 2-stage amplifier. The part may also

DUAL-BAND 3V LOW NOISE AMPLIFIER

文件：198.2 Kbytes Page：10 Pages

DUAL-BAND 3V LOW NOISE AMPLIFIER

文件：341.2 Kbytes Page：12 Pages

DUAL-BAND 3V LOW NOISE AMPLIFIER

DUAL-BAND 3V LOW NOISE AMPLIFIER

Product Description The RF2363 is a dual-band Low Noise Amplifier designed for use as a front-end for 950MHz GSM/1850MHz DCS applications and may be used for dual-band cellular/PCS applications. The 900MHz LNA is a single-stage amplifier; the 1900MHz LNA is a 2-stage amplifier. The part may also

DUAL-BAND 3V LOW NOISE AMPLIFIER

文件：198.2 Kbytes Page：10 Pages

DUAL-BAND 3V LOW NOISE AMPLIFIER

文件：341.2 Kbytes Page：12 Pages

DUAL-BAND 3V LOW NOISE AMPLIFIER

文件：198.2 Kbytes Page：10 Pages

DUAL-BAND 3V LOW NOISE AMPLIFIER

文件：341.2 Kbytes Page：12 Pages

1/3-type CCD Area Sensors with 470 k Pixels

DESCRIPTION The LZ2363B/LZ2364BJ are 1/3-type (6.0 mm) solid-state image sensors that consist of PN photodiodes and CCDs (charge-coupled devices). With approximately 470 000 pixels (795 horizontal x 595 vertical), the sensor provides a stable high-resolution color (LZ2363B)/B/W (LZ2364BJ) image.

DC-2800 MHz Silicon Germanium HBT Cascadeable Gain Block

Product Description Stanford Microdevices’ SGA-2363 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.7-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz.

Clock Generator

文件：395.09 Kbytes Page：6 Pages