您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第5502页 > RF212

型号 功能描述 生产厂家 企业 LOGO 操作
RF212

Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc

ETCList of Unclassifed Manufacturers

未分类制造商

RF212

Image-Reject Front End for Dual or Tri-Band GSM Applications

Synaptics

RF212-11

Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc

ETCList of Unclassifed Manufacturers

未分类制造商

RF212-21

Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc

ETCList of Unclassifed Manufacturers

未分类制造商

RF2125

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

RFMD

威讯联合

RF2125P

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

RFMD

威讯联合

RF2125PCBA

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

RFMD

威讯联合

RF2125PPCBA

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

RFMD

威讯联合

RF2126

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

RFMD

威讯联合

RF2126

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

RFMD

威讯联合

RF2126_07

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

RFMD

威讯联合

RF2126PCBA

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

RFMD

威讯联合

RF2126PCK

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

RFMD

威讯联合

RF2127

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters req

RFMD

威讯联合

RF2127PCBA

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters req

RFMD

威讯联合

RF2128

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2128 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

RFMD

威讯联合

RF2128P

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2128P is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

RFMD

威讯联合

RF2128PCBA

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2128 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

RFMD

威讯联合

RF2128PPCBA

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2128P is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

RFMD

威讯联合

RF2129

3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

RFMD

威讯联合

RF2129PCBA

3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

RFMD

威讯联合

RF2123

Base Station Equipment

文件：312.34 Kbytes Page：4 Pages

RFMD

威讯联合

RF2123

Base Station Equipment

QORVO

威讯联合

RF2128

MEDIUM POWER LINEAR AMPLIFIER

QORVO

威讯联合

212

CTS 212 Rotary Switch

文件：346.96 Kbytes Page：2 Pages

CTS

西迪斯

212

Direct replacement for T1 쩐 Lilliput Edison Screw E5

文件：266.18 Kbytes Page：5 Pages

MARL

212

M8 Male 3 Pin Field Attachable

文件：199.74 Kbytes Page：2 Pages

ALPHAWIRE

212HR

M8 Male 3 Pin Field Attachable

文件：199.74 Kbytes Page：2 Pages

ALPHAWIRE

212XK

E-Z-Hook is dedicated to providing quality parts, delivered on-time at reasonable prices

文件：4.89948 Mbytes Page：122 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

RF212产品属性

  • 类型

    描述

  • 型号

    RF212

  • 功能描述

    Image-Reject Front End for Dual or Tri-Band GSM Applications

RF212供应商更多...

更新时间：2025-12-27 12:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市华来深电子有限公司
RF212-11
RFMD
23+
TSOP
8650
受权代理!全新原装现货特价热卖!
询价
深圳市力拓辉电子有限公司
RF2123-000
LITTELFUSE
25+
1000
只做原装鄙视假货15118075546
询价
深圳市斌能达电子科技有限公司
RF2126
RFMD
24+
SOP8
2000
全新原装深圳仓库现货有单必成
询价
深圳市宇创芯科技有限公司
RF212-11
RF
24+
THSSOP
9600
原装现货,优势供应,支持实单!
询价
深圳市威雅利发展有限公司
RF212-11
CONEXANT
02+
TSOP
456
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
中天科工半导体（深圳）有限公司
RF2128PTR
RFMD/威讯
25+
SOP8
12496
RFMD/威讯原装正品RF2128PTR即刻询购立享优惠#长期有货
询价
深圳诚思涵科技有限公司
RF2126
RFMD
24+
SOP-8
8000
只做原装正品现货
询价
贸泽芯城（深圳）电子科技有限公司
RF2123A
PHI
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
深圳市宇集芯电子有限公司
RF2125
RFMD
24+
SOP8
90000
一级代理商进口原装现货、价格合理
询价
深圳市百诺芯科技有限公司
RF212-11
RF
23+
TO-59
8510
原装正品代理渠道价格优势
询价

RF212芯片相关品牌

RF212规格书下载地址

RF212参数引脚图相关

RF212数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示