位置：首页 > IC中文资料第5502页 > RF212
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RF212 | Image-Reject Front End for Dual or Tri-Band GSM Applications [Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
RF212 | Image-Reject Front End for Dual or Tri-Band GSM Applications | SYNAPTICS | | |
Image-Reject Front End for Dual or Tri-Band GSM Applications [Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Image-Reject Front End for Dual or Tri-Band GSM Applications [Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HIGH POWER LINEAR AMPLIFIER Product Description The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati | RFMD 威讯联合 | | ||
HIGH POWER LINEAR AMPLIFIER Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati | RFMD 威讯联合 | | ||
HIGH POWER LINEAR AMPLIFIER Product Description The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati | RFMD 威讯联合 | | ||
HIGH POWER LINEAR AMPLIFIER Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati | RFMD 威讯联合 | | ||
HIGH POWER LINEAR AMPLIFIER Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO | RFMD 威讯联合 | | ||
HIGH POWER LINEAR AMPLIFIER Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO | RFMD 威讯联合 | | ||
HIGH POWER LINEAR AMPLIFIER Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO | RFMD 威讯联合 | | ||
HIGH POWER LINEAR AMPLIFIER Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO | RFMD 威讯联合 | | ||
HIGH POWER LINEAR AMPLIFIER Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO | RFMD 威讯联合 | | ||
MEDIUM POWER LINEAR AMPLIFIER Product Description The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters req | RFMD 威讯联合 | | ||
MEDIUM POWER LINEAR AMPLIFIER Product Description The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters req | RFMD 威讯联合 | | ||
MEDIUM POWER LINEAR AMPLIFIER Product Description The RF2128 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and | RFMD 威讯联合 | | ||
MEDIUM POWER LINEAR AMPLIFIER Product Description The RF2128P is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and | RFMD 威讯联合 | | ||
MEDIUM POWER LINEAR AMPLIFIER Product Description The RF2128 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and | RFMD 威讯联合 | | ||
MEDIUM POWER LINEAR AMPLIFIER Product Description The RF2128P is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and | RFMD 威讯联合 | | ||
3V, 2.5GHZ LINEAR POWER AMPLIFIER Product Description The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi | RFMD 威讯联合 | | ||
3V, 2.5GHZ LINEAR POWER AMPLIFIER Product Description The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi | RFMD 威讯联合 | | ||
Base Station Equipment 文件：312.34 Kbytes Page：4 Pages | RFMD 威讯联合 | | ||
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HIGH POWER LINEAR AMPLIFIER | QORVO 威讯联合 | | ||
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RF212产品属性
- 类型
描述
- 型号
RF212
- 功能描述
Image-Reject Front End for Dual or Tri-Band GSM Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RFMD |
20+ |
SOP8 |
2960 |
诚信交易大量库存现货 |
|||
RFMD |
2016+ |
SOP8 |
2853 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RFMD |
24+ |
SOP-8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RFMD/威讯 |
25+ |
SOP8 |
12496 |
RFMD/威讯原装正品RF2128PTR即刻询购立享优惠#长期有货 |
|||
RFMD |
24+ |
SOP8 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
RFMD |
24+ |
SOP8 |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
RFMD |
24+ |
SOP8 |
2000 |
全新原装深圳仓库现货有单必成 |
|||
RFMD |
SOP8 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RF2128P |
25+ |
54 |
54 |
||||
LITTELFUSE |
25+ |
1000 |
只做原装鄙视假货15118075546 |
RF212芯片相关品牌
RF212规格书下载地址
RF212参数引脚图相关
- s9014
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- s8550
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- s101
- s007
- rtl8100c
- rs触发器
- rohs指令
- ROHS
- ricoh
- rf开关
- rfid技术
- rfid
- RF2161
- RF2157
- RF2155
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- RF2152
- RF2146
- RF2145
- RF2140
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- RF2137
- RF2132
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- RF2129
- RF2128P
- RF2128
- RF2127PCBA
- RF2127
- RF2126TR7
- RF2126PCK
- RF2126PCBA
- RF2126-000
- RF2126_07
- RF2126
- RF2125PCBA
- RF2125P
- RF2125
- RF2123PCBA
- RF2123-000
- RF2123
- RF212-21
- RF2122-000
- RF212-11
- RF2121-000
- RF2120-000
- RF2119PCBA
- RF2119-000
- RF2119
- RF2118-000
- RF2117PCBA
- RF2117
- RF2115LPCBA
- RF2115L
- RF2115
- RF2114PCBA
- RF211-4-14
- RF2114
- RF2113
- RF2111-000
- RF210TAS75
- RF210TAS50
- RF210T0075
- RF210T0050
- RF210PAS75
- RF210PAS50
- RF210B
- RF210A
- RF2105L
- RF2105
- RF2104
- RF2103P
- RF-210
- RF2054
- RF2053
- RF2052
- RF2051
- RF2048
- RF2047
- RF2046
- RF2045
RF212数据表相关新闻
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2019-5-11
DdatasheetPDF页码索引
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