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位置：首页 > IC中文资料第7220页 > RF2

RF2价格

参考价格：￥17.6091

型号：RF20 品牌：Schneider 备注：这里有RF2多少钱，2025年最近7天走势，今日出价，今日竞价，RF2批发/采购报价，RF2行情走势销售排行榜，RF2报价。
型号 功能描述 生产厂家&企业 LOGO 操作
RF2

Series, High Frequency Power Resistors Thick film,Non-Inductive

WillowofferstheRFseriestomeetgeneralsetofrequirementsNON-INDUCTIVEhighfrequency,satisfywithanhighpowerandNon-inductivespecifcationatEconomicPrice. SeriesRFPrecisionPowerResistor,Non-Inductive HighFrequency NonInductivePerformence Fullpowerandvariou

WILLOWWillow Technologies Ltd

柳树科技柳树科技有限公司

WILLOW
RF2

Fully encapsulated Frequency range 10 kHz to 500 MHz 6 pin DIP and SMD

文件：352.02 Kbytes Page：3 Pages

BournsBourns Electronic Solutions

伯恩斯

Bourns
RF200

Series, High Frequency Power Resistors Thick film,Non-Inductive

WillowofferstheRFseriestomeetgeneralsetofrequirementsNON-INDUCTIVEhighfrequency,satisfywithanhighpowerandNon-inductivespecifcationatEconomicPrice. SeriesRFPrecisionPowerResistor,Non-Inductive HighFrequency NonInductivePerformence Fullpowerandvariou

WILLOWWillow Technologies Ltd

柳树科技柳树科技有限公司

WILLOW
RF2001

Fast recovery Diodes (Silicon Epitaxial Planar)

Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification

ROHMRohm

罗姆罗姆半导体集团

ROHM
RF2001NS3D

Fast Recovery Diodes

SuperFastRecoveryDiode Features 1)Ultralowswitchingloss 2)Highcurrentoverloadcapacity 3)Cathodecommondualtype Series StandardFastRecovery Applications Generalrectification Construction Siliconepitaxialplaner

ROHMRohm

罗姆罗姆半导体集团

ROHM
RF2001T2D

Fast recovery Diodes (Silicon Epitaxial Planar)

Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification

ROHMRohm

罗姆罗姆半导体集团

ROHM
RF2001T2D

Fast recovery diode

Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification

ROHMRohm

罗姆罗姆半导体集团

ROHM
RF2001T3D

Fast recovery diode

1)Cathodecommontype. 2)UltraLowVF 3)Veryfastrecovery 4)Lowswitchingloss

ROHMRohm

罗姆罗姆半导体集团

ROHM
RF2001T4S

Fast recovery diode

Features 1)Highreliability.(TO-220) 2)Lownoise. 3)Veryfastswitching. Construction Siliconepitaxialplanar Applications Generalrectification

ROHMRohm

罗姆罗姆半导体集团

ROHM
RF200A

HIGH VOLTAGE HIGH CURRENT MINIATURE RECTIFIERS

HIGHVOLTAGEHIGHCURRENTMINIATURERECTIFIERS ●SMALLSIZEMOLDEDPACKAGES ●PRV1,000TO12,000VOLTS ●FASTRECOVERY(R_SERIES) ●AVALANCHECHARACTERISTICS

edi

Electronic devices inc.

edi
RF200B

HIGH VOLTAGE HIGH CURRENT MINIATURE RECTIFIERS

HIGHVOLTAGEHIGHCURRENTMINIATURERECTIFIERS ●SMALLSIZEMOLDEDPACKAGES ●PRV1,000TO12,000VOLTS ●FASTRECOVERY(R_SERIES) ●AVALANCHECHARACTERISTICS

edi

Electronic devices inc.

edi
RF202LAM2S

Super Fast Recovery Diode

Applications Generalrectification Features 1)Lowforwardvoltage 2)Lowswitchingloss 3)Highcurrentoverloadcapacity

ROHMRohm

罗姆罗姆半导体集团

ROHM
RF2043

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2043isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2043PCBA

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2043isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2044

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2044isageneralpurpose,low-costRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2045

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2045isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2045PCBA

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2045isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2046

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2046isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2046PCBA

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2046isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2047

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2047isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2047PCBA

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2047isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2048

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2048isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2048PCBA

GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2048isageneralpurpose,lowcostRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50Ωgainblock.ApplicationsincludeIFandRFamplifica

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2103P

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2103PisamediumpowerlinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinallinearRFamplifierinUHFradiotransmittersoperatingbetween450MHzand

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2103PPCBA

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2103PisamediumpowerlinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinallinearRFamplifierinUHFradiotransmittersoperatingbetween450MHzand

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2104

MEDIUM POWER AMPLIFIER

ProductDescription TheRF2104isamediumpoweramplifierIC.ThedeviceismanufacturedonalowcostSiliconprocess,andhasbeendesignedforuseasthefinalRFamplifierinUHFradiotransmittersoperatingbetween400MHzand1000MHz.Itmayalsobeusedasadriveramplifierinhigherpowe

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2104PCBA-H

MEDIUM POWER AMPLIFIER

ProductDescription TheRF2104isamediumpoweramplifierIC.ThedeviceismanufacturedonalowcostSiliconprocess,andhasbeendesignedforuseasthefinalRFamplifierinUHFradiotransmittersoperatingbetween400MHzand1000MHz.Itmayalsobeusedasadriveramplifierinhigherpowe

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2104PCBA-L

MEDIUM POWER AMPLIFIER

ProductDescription TheRF2104isamediumpoweramplifierIC.ThedeviceismanufacturedonalowcostSiliconprocess,andhasbeendesignedforuseasthefinalRFamplifierinUHFradiotransmittersoperatingbetween400MHzand1000MHz.Itmayalsobeusedasadriveramplifierinhigherpowe

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2105

HIGH POWER LINEAR UHF AMPLIFIER

ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2105L

HIGH POWER LINEAR UHF AMPLIFIER

ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2105LPCBA

HIGH POWER LINEAR UHF AMPLIFIER

ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF210A

Dual-Band, Image-Reject Downconverters For GSM Applications

TheRF210AandRF210Bdevicesareavailableasadual-bandfrontendforGlobalSystemforMobileCommunications(GSM)handsetapplications.Bothofthesehighlyintegrated,monolithicdevicesareoptimizedfordual-banduseinGSM900/DCS1800orGSM900/PCS1900applications.Thedevicesincludetw

CONEXANT

Synaptics Incorporated.

CONEXANT
RF210B

Dual-Band, Image-Reject Downconverters For GSM Applications

TheRF210AandRF210Bdevicesareavailableasadual-bandfrontendforGlobalSystemforMobileCommunications(GSM)handsetapplications.Bothofthesehighlyintegrated,monolithicdevicesareoptimizedfordual-banduseinGSM900/DCS1800orGSM900/PCS1900applications.Thedevicesincludetw

CONEXANT

Synaptics Incorporated.

CONEXANT
RF2114

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2114isamediumtohighpowerlinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinallinearRFamplifierinUHFradiotransmittersoperatingbetween1MHz

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2114PCBA

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2114isamediumtohighpowerlinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinallinearRFamplifierinUHFradiotransmittersoperatingbetween1MHz

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2115

HIGH POWER UHF AMPLIFIER

ProductDescription TheRF2115LisahighpoweramplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinanalogcellularphonetransmittersorISMapplicationsoperatingat

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2115L

HIGH POWER UHF AMPLIFIER

ProductDescription TheRF2115LisahighpoweramplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinanalogcellularphonetransmittersorISMapplicationsoperatingat

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2115LPCBA

HIGH POWER UHF AMPLIFIER

ProductDescription TheRF2115LisahighpoweramplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinanalogcellularphonetransmittersorISMapplicationsoperatingat

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2117

HIGH EFFICIENCY 400MHZ AMPLIFIER

GeneralDescription TheRF2117isahighpoweramplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinanalogcellularphonetransmittersbetween400MHzand500MHzorISMa

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2117PCBA

HIGH EFFICIENCY 400MHZ AMPLIFIER

GeneralDescription TheRF2117isahighpoweramplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinanalogcellularphonetransmittersbetween400MHzand500MHzorISMa

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2119

HIGH EFFICIENCY 2V POWER AMPLIFIER

ProductDescription TheRF2119isahigh-power,high-efficiencyamplifierICtargeting2Vto4Vhandheldsystems.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinhand-helddigita

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2119PCBA

HIGH EFFICIENCY 2V POWER AMPLIFIER

ProductDescription TheRF2119isahigh-power,high-efficiencyamplifierICtargeting2Vto4Vhandheldsystems.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierinhand-helddigita

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF212

Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] TheRF212deviceisavailableasadual-band(EGSM900/DCS1800)frontendorasatri-band(EGSM900/DCS1800/PCS1900)frontendforGlobalSystemforMobileCommunications(GSM)mobiletelephonyapplications.Eachdeviceintegratesalltherequiredfront-endcomponentsafterthefrequenc

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
RF212-11

Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] TheRF212deviceisavailableasadual-band(EGSM900/DCS1800)frontendorasatri-band(EGSM900/DCS1800/PCS1900)frontendforGlobalSystemforMobileCommunications(GSM)mobiletelephonyapplications.Eachdeviceintegratesalltherequiredfront-endcomponentsafterthefrequenc

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
RF212-21

Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] TheRF212deviceisavailableasadual-band(EGSM900/DCS1800)frontendorasatri-band(EGSM900/DCS1800/PCS1900)frontendforGlobalSystemforMobileCommunications(GSM)mobiletelephonyapplications.Eachdeviceintegratesalltherequiredfront-endcomponentsafterthefrequenc

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
RF2125

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2125isahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalPCSphonetransmittersandbasestati

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2125P

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2125Pisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierindigitalPCSphonetransmittersandbasestati

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2125PCBA

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2125isahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalPCSphonetransmittersandbasestati

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2125PPCBA

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2125Pisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierindigitalPCSphonetransmittersandbasestati

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2126

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2126

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2126_07

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2126PCBA

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2126PCK

HIGH POWER LINEAR AMPLIFIER

ProductDescription TheRF2126isahigh-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)processandhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANandPO

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2127

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2127isamedium-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin1800MHzdigitalPCSphonetransmittersreq

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2127PCBA

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2127isamedium-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin1800MHzdigitalPCSphonetransmittersreq

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2128

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2128isamedium-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANand

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2128P

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2128Pisamedium-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANand

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2128PCBA

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2128isamedium-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANand

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD
RF2128PPCBA

MEDIUM POWER LINEAR AMPLIFIER

ProductDescription TheRF2128Pisamedium-power,high-efficiency,linearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierin2.45GHzISMapplicationssuchasWLANand

RFMDRF Micro Devices

威讯联合威讯联合半导体(德州)有限公司

RFMD

RF2产品属性

  • 类型

    描述

  • 型号

    RF2

  • 制造商

    Ferraz Shawmut

RF2供应商更多...

更新时间：2025-6-15 11:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市宇创芯科技有限公司
RF2108TR13
RFMD
24+
SOP
9600
原装现货,优势供应,支持实单!
询价
深圳市骏创达科技有限公司
RF2498-000
TE/泰科
2508+
/
275591
一级代理，原装现货
询价
深圳市昌和盛利电子有限公司
RF2360
RFMD
23+
SOP16
12800
100%原装现货,特价销售中
询价
深圳市坤融电子科技有限公司
RF2374TR7
RFMD
24+
QFN8
8950
BOM配单专家,发货快,价格低
询价
深圳兆威电子有限公司
RF2362TR7
RFMD
23+
SOT23-5
4700
只做原装全系列供应价格优势
询价
深圳市兴灿科技有限公司
RF2436TR7
RFMD
24+
N/P
16500
代理授权直销,原装现货,假一罚十,长期稳定供应
询价
深圳市金华微盛电子有限公司
RF2L6S
ROHM
19+
SMA
9000
询价
深圳市得捷芯城科技有限公司
RF2052
RFMD
24+
N/A
19048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
深圳市东来宝电子科技有限公司
RF2422
RFMD
24+
SOP16
66500
郑重承诺只做原装进口现货
询价
深圳市羿芯诚电子有限公司
RF2703
REMD
20+
SOP
2860
原厂原装正品价格优惠公司现货欢迎查询
询价

RF2芯片相关品牌

  • BANNER
  • CHEMI-CON
  • CTMICRO
  • JUXING
  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

RF2规格书下载地址

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RF2数据表相关新闻

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