60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -60A@ TC=25℃ ·Drain Source Voltage -VDSS= -30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

P-Channel 30-V (D-S) MOSFET

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60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs