3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET??Enhancement Mode Power MOSFET

This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switch

3.5A, 30V, 0.06 Ohm, Dual N-Channel LittleFET??Power MOSFET

This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switch

3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET??Enhancement Mode Power MOSFET

This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switch

3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFET??Power MOSFET

This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switch

3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET??Power MOSFET

This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switch

3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET??Power MOSFET

This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switch

3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET??Power MOSFET

This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switchi

3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET??Power MOSFET

This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switchi

2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET??Power MOSFET

This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switch

2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET??Power MOSFET

This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in application

2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET??Power MOSFET

This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in application

6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET

This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as swi

6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET

This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as swi

6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET??Power MOSFET

This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as swi

6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET??Enhancement Mode Power MOSFET

This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as swi

7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET??Power MOSFET

The RF1K49211 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications su

7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET??Power MOSFET

The RF1K49211 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications su

2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET??Power MOSFET

The RF1K49221 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such

2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET??Power MOSFET

The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such

2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET??Power MOSFET

The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such

2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET??Power MOSFET

The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such

3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET??Power MOSFET

The RF1K49224 complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such a

封装/外壳：径向，Can 包装：剪切带（CT）带盒（TB） 描述：ALUMINUM ELECTROLYTIC CAPACITORS 电容器 铝电解电容器

封装/外壳：径向，Can 包装：散装 描述：ALUMINUM ELECTROLYTIC CAPACITORS 电容器 铝电解电容器

3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET™ Enhancement Mode Power MOSFET

Dual N-Channel 30-V (D-S) MOSFET

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3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET™ Power MOSFET

3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET™ Power MOSFET