REG101NA-2.5SLASH3K.B集成电路资料全球贸易商-IC资料网

找IC，尽在114IC

登录注册

芯片资料

芯片资料
丝印反查
库存查询
行业新闻
制造商
替换型号
晶体管

精确

位置：首页 > IC中文资料第476页 > REG101NA

REG101NA价格

参考价格：￥7.8586

型号：REG101NA-2.5/250 品牌：TI 备注：这里有REG101NA多少钱，2026年最近7天走势，今日出价，今日竞价，REG101NA批发/采购报价，REG101NA行情走势销售排行榜，REG101NA报价。

型号	功能描述	生产厂家企业	LOGO
REG101NA-2.5SLASH250	丝印代码：RO1G；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.5SLASH250.B	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.5SLASH3K	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.5SLASH3K.B	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.85SLASH250	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.85SLASH250.B	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.85SLASH3K	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.85SLASH3K.B	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.8SLASH250	丝印代码：RO1E；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.8SLASH250.B	丝印代码：RO1E；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3.3SLASH250	丝印代码：RO1C；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3.3SLASH250.B	丝印代码：RO1C；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3.3SLASH250G4	丝印代码：RO1C；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3.3SLASH3K	丝印代码：RO1C；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3.3SLASH3K.B	丝印代码：RO1C；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3.3SLASH3KG4	丝印代码：RO1C；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3/250	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3/250.B	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3/3K	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3/3K.B	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3SLASH250	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3SLASH250.B	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3SLASH3K	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3SLASH3K.B	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-5SLASH250	丝印代码：RO1B；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-5SLASH250.B	丝印代码：RO1B；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-5SLASH3K	丝印代码：RO1B；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-5SLASH3K.B	丝印代码：RO1B；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH250	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH250.A	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH250.B	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH3K	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH3K.A	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH3K.B	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH3KG4	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.5/250	封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：IC REG LINEAR 2.5V 100MA SOT23-5 集成电路（IC）线性 + 开关稳压器	TI 德州仪器	TI
REG101NA-2.5/250	DMOS 100mA Low-Dropout Regulator 文件：277.56 Kbytes Page：13 Pages	TI 德州仪器	TI
REG101NA-2.5/250	DMOS 100mA Low-Dropout Regulator 文件：400.96 Kbytes Page：18 Pages	TI 德州仪器	TI
REG101NA-2.5/250	100mA Low-Dropout Regulator 文件：797.61 Kbytes Page：23 Pages	TI 德州仪器	TI
REG101NA-2.5/250G4	100mA Low-Dropout Regulator 文件：797.61 Kbytes Page：23 Pages	TI 德州仪器	TI
REG101NA-2.5/250G4	DMOS 100mA Low-Dropout Regulator 文件：400.96 Kbytes Page：18 Pages	TI 德州仪器	TI
REG101NA-2.5/3K	DMOS 100mA Low-Dropout Regulator 文件：277.56 Kbytes Page：13 Pages	TI 德州仪器	TI
REG101NA-2.5/3K	100mA Low-Dropout Regulator 文件：797.61 Kbytes Page：23 Pages	TI 德州仪器	TI
REG101NA-2.5/3K	DMOS 100mA Low-Dropout Regulator 文件：400.96 Kbytes Page：18 Pages	TI 德州仪器	TI
REG101NA-2.5/3K	封装/外壳：SC-74A，SOT-753 包装：卷带（TR）描述：IC REG LINEAR 2.5V 100MA SOT23-5 集成电路（IC）稳压器 - 线性	TI 德州仪器	TI
REG101NA-2.5/3KG4	100mA Low-Dropout Regulator 文件：797.61 Kbytes Page：23 Pages	TI 德州仪器	TI
REG101NA-2.5/3KG4	DMOS 100mA Low-Dropout Regulator 文件：400.96 Kbytes Page：18 Pages	TI 德州仪器	TI
REG101NA-2.5SLASH250	DMOS 100mA Low-Dropout Regulator 文件：277.56 Kbytes Page：13 Pages	TI 德州仪器	TI
REG101NA-2.5SLASH250	DMOS 100mA Low-Dropout Regulator 文件：400.96 Kbytes Page：18 Pages	TI 德州仪器	TI
REG101NA-2.5SLASH250	100mA Low-Dropout Regulator 文件：797.61 Kbytes Page：23 Pages	TI 德州仪器	TI
REG101NA-2.5SLASH250G4	DMOS 100mA Low-Dropout Regulator 文件：400.96 Kbytes Page：18 Pages	TI 德州仪器	TI
REG101NA-2.5SLASH250G4	100mA Low-Dropout Regulator 文件：797.61 Kbytes Page：23 Pages	TI 德州仪器	TI
REG101NA-2.5SLASH3K	100mA Low-Dropout Regulator 文件：797.61 Kbytes Page：23 Pages	TI 德州仪器	TI
REG101NA-2.5SLASH3K	DMOS 100mA Low-Dropout Regulator 文件：277.56 Kbytes Page：13 Pages	TI 德州仪器	TI
REG101NA-2.5SLASH3K	DMOS 100mA Low-Dropout Regulator 文件：400.96 Kbytes Page：18 Pages	TI 德州仪器	TI
REG101NA-2.5SLASH3KG4	DMOS 100mA Low-Dropout Regulator 文件：400.96 Kbytes Page：18 Pages	TI 德州仪器	TI
REG101NA-2.5SLASH3KG4	100mA Low-Dropout Regulator 文件：797.61 Kbytes Page：23 Pages	TI 德州仪器	TI
REG101NA-2.8/250	DMOS 100mA Low-Dropout Regulator 文件：400.96 Kbytes Page：18 Pages	TI 德州仪器	TI
REG101NA-2.8/250	DMOS 100mA Low-Dropout Regulator 文件：277.56 Kbytes Page：13 Pages	TI 德州仪器	TI
REG101NA-2.8/250	100mA Low-Dropout Regulator 文件：797.61 Kbytes Page：23 Pages	TI 德州仪器	TI

REG101NA产品属性

类型
描述
型号
REG101NA
制造商
Texas Instruments
功能描述
V REG LDO 0.1A 2.5V SOT-23-5 101

REG101NA供应商更多...

更新时间：2026-3-14 15:08:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳航星空电子技术有限公司	REG101NA-2.8	TI	23+	SOT23-5	3200	公司只做原装，可来电咨询	询价
深圳市创新迹电子有限公司	REG101NA-2.8	原厂	22+	N/A	20000	只做原装	询价
深圳市佳斯泰科技有限公司	REG101NA-2.8/250	TI	22+	SC-74A	9000	原厂渠道,现货配单	询价
深圳市华斯顿科技有限公司	REG101NA-2.8	TI	25+23+	SOT23-5	44164	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市安富世纪电子有限公司	REG101NA-2.8	TI	23+	SOT23-5	50000	全新原装正品现货,支持订货	询价
上海鑫科润电子科技有限公司	REG101NA-2.8/250	TI	06+	SOT23/5	1806	原装现货海量库存欢迎咨询	询价
深圳市纳艾斯科技有限公司	REG101NA-2.8	TI	24+	SOT23-5	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市盈慧通电子有限公司	REG101NA-2.8	TI	2511	SOT23-5	3200	电子元器件采购降本 30%!原厂直采,砍掉中间差价	询价
深圳市威雅利发展有限公司	REG101NA-2.8	TI	0449+	SOT23-5	220	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市河锋鑫科技有限公司	REG101NA-2.8	TI/德州仪器	2022+	SOT23-5	1841	原厂代理终端免费提供样品	询价

REG101NA芯片相关品牌

REG101NA规格书下载地址

REG101NA参数引脚图相关

REG101NA数据表相关新闻

REG104GA-5保原装超低价出
REG104GA-5保原装超低价出
2024-10-10
REG104GA-5/2K5主营TI原装现货
REG104GA-5/2K5主营TI原装现货
2024-5-16
REFAUDIODMA12040PTOBO1
REFAUDIODMA12040PTOBO1
2023-6-12
REFAUDIOAMA12070TOBO1
REFAUDIOAMA12070TOBO1
2023-6-12
REG104GA-A/2K5
产品描述：具有使能功能的 1A、15V、低压降稳压器
2022-5-9
REF6125IDGKR
热门搜索： 2.5 V 0.05 % 参考电压 , 3.3 V 0.1 % 参考电压 , 1.8 V 参考电压 , ADR444 参考电压 , SOT-23-3 SMD/SMT 0.5 % 参考电压 , 2.5 V SO-8 0.05 % 参考电压
2020-7-13

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108

找IC，尽在114IC

REG101NA价格

REG101NA产品属性

REG101NA供应商更多...

REG101NA芯片相关品牌

REG101NA规格书下载地址

REG101NA参数引脚图相关

REG101NA数据表相关新闻

REG104GA-5保原装超低价出

REG104GA-5/2K5主营TI原装现货

REFAUDIODMA12040PTOBO1

REFAUDIOAMA12070TOBO1

REG104GA-A/2K5

REF6125IDGKR

DdatasheetPDF页码索引