REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

Contactless Memory Chip with 64-bit Unique Serial ID 13.56 MHz, 2048-bit High Endurance EEPROM

DESCRIPTION The M35102 is a contactless memory, powered by the received carrier electromagnetic wave. It is a 1792-bit EEPROM, plus 256-bit ROM, organised as 16 pages of 16 x 8 bits. ■ ISO 14443-2 Type-B Standard Compliant ■ 13.56 MHz Carrier Frequency ■ 847 kHz Subcarrier Frequency ■ 106 Kbi

Memory Micromodules General Information for D1, D2 and C Packaging

DESCRIPTION Memory Cards consist of two main parts: the plastic card, and the embedded Micromodule (which, in turn, carries the silicon chip). ■ Micromodules were developed specifically for embedding in Smartcards and Memory Cards ■ The Micromodule provides: – Support for the chi

22 (7/30) AWG Tinned Copper

文件：393.65 Kbytes Page：4 Pages

Time-to-Digital Converter Without RTC

文件：999.7 Kbytes Page：37 Pages

Time-to-Digital Converter Without RTC

文件：999.7 Kbytes Page：37 Pages