丝印代码：2ESC；REF34xx Low-Drift, Low-Power, Small-Footprint Series Voltage Reference

1 Features • Initial accuracy: ±0.05% (maximum) • Temperature coefficient : 6 ppm/°C (maximum) • Operating temperature range: −40°C to +125°C • Output current: ±10 mA • Low quiescent current: 95 μA (maximum) • Ultra-low zero load dropout voltage: 100 mV (maximum) • Wide input voltage:

63kHz, Nanopower, BiMOS Operational Amplifiers

Description The CA3440 is an integrated circuit operational amplifier that combines the advantages of MOS and bipolar transistors on a single monolithic chip. Features • High Input Resistance . . . . . . . . . . . . . . . . . . .2TΩ (Typ) • Standby Power at V+ = 5V . . . . . . . . . . . . . 30

7.6mm 0.3 inch COMPACT NUMERIC FRAME DISPLAY

FEATURES • Bright Bold Segments • Common Anode/Cathode • Low Power Consumption • Low Current Capability • Neutral Segments • Grey Face • Epoxy Encapsulated Frame • High Performance • High Reliability APPLICATIONS • Appliances • Automotive • Instrumentation • Process Control

SILICON NPN TRANSISTOR

DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications. ■ SGS-THOMSON PREFERRED SALESTYPE ■ NPN TRANSISTOR

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use in horizontal driver, class A off-line amplifier and off-line switching applications. Sourced from Process 36.

0.300-INCH SEVEN SEGMENT DISPLAYS

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