REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

封装/外壳：8-UFQFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.15% 8UQFN 集成电路（IC） 电压基准

Drift Voltage Reference

文件：1.42207 Mbytes Page：32 Pages

SC70-3, SOT-23-3, and UQFN-8, 30-ppm Drift Voltage Reference

文件：1.65183 Mbytes Page：35 Pages

3.9-關A, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/C Drift Voltage Reference

文件：1.79607 Mbytes Page：37 Pages

CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

LINEAR INTEGRATED CIRCUIT

FEATURES * Dual output: 3.3V/1A, 2.5V/1A. * Output voltage precision of ±2. * Output consists of PNP power transistor with low-dropout voltage. * Built-in over current protection circuit (OCP). * Built-in thermal shut down circuit (TSD). * Ideal for hard disk drives applications.

.025 NPN Phototransistors

PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor mounted in a 3 mm diameter, lensed, end looking, transparent plastic package. These devices are spectrally and mechanically matched to the VTE337xLA series of IREDs.

VERY LOW DROP DUAL VOLTAGE REGULATOR

文件：384.97 Kbytes Page：13 Pages

30 WATT ISOLATED DC/DC CONVERTER

文件：1.27079 Mbytes Page：5 Pages