Precision Micropower, Low Dropout Voltage References

GENERAL DESCRIPTION The REF19x series precision band gap voltage references use a patented temperature drift curvature correction circuit and laser trimming of highly stable, thin-film resistors to achieve a very low temperature coefficient and high initial accuracy. FEATURES Initial ac

4.5V精密、微功耗、低压差、低压基准电压源

REF19x系列精密带隙基准电压源采用温度漂移曲率校正专利电路，并对高稳定性薄膜电阻进行激光调整，从而实现极低的温度系数和高初始精度。 该系列由微功耗、低压差(LDV)器件组成，可利用仅比输出电压高出100 mV的电源提供稳定的输出电压，耗用的电源电流低于45 μA。通过对SLEEP 引脚施加低TTL或CMOS电平，可以使能休眠模式。在休眠模式下，输出关闭，电源电流进一步降至15 μA以下。\n\n REF19x系列基准电压源的额定温度范围为−40°C至+85°C工业温度范围，典型性能规格的温度范围为−40°C至+125°C，适合汽车等应用领域。   \n\n 电 • 初始精度：±2 mV（最大值）\n\n• 温度系数：5 ppm/°C（最大值）\n\n• 低电源电流：45 µA（最大值）\n\n• 休眠模式：15 µA（最大值）;

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

1 Features 1• Two Outputs, VREF and VREF / 2, for Convenient Use in Single-Supply Systems • Excellent Temperature Drift Performance: – 25 ppm/°C (max) from –40°C to 125°C • High Initial Accuracy: ±0.1% (max) • VREF and VBIAS Tracking over Temperature: – 6 ppm/°C (max) from –40°C to 85°C

REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

1 Features 1• Two Outputs, VREF and VREF / 2, for Convenient Use in Single-Supply Systems • Excellent Temperature Drift Performance: – 25 ppm/°C (max) from –40°C to 125°C • High Initial Accuracy: ±0.1% (max) • VREF and VBIAS Tracking over Temperature: – 6 ppm/°C (max) from –40°C to 85°C

REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

1 Features 1• Two Outputs, VREF and VREF / 2, for Convenient Use in Single-Supply Systems • Excellent Temperature Drift Performance: – 25 ppm/°C (max) from –40°C to 125°C • High Initial Accuracy: ±0.1% (max) • VREF and VBIAS Tracking over Temperature: – 6 ppm/°C (max) from –40°C to 85°C

REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

1 Features 1• Two Outputs, VREF and VREF / 2, for Convenient Use in Single-Supply Systems • Excellent Temperature Drift Performance: – 25 ppm/°C (max) from –40°C to 125°C • High Initial Accuracy: ±0.1% (max) • VREF and VBIAS Tracking over Temperature: – 6 ppm/°C (max) from –40°C to 85°C

REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

1 Features 1• Two Outputs, VREF and VREF / 2, for Convenient Use in Single-Supply Systems • Excellent Temperature Drift Performance: – 25 ppm/°C (max) from –40°C to 125°C • High Initial Accuracy: ±0.1% (max) • VREF and VBIAS Tracking over Temperature: – 6 ppm/°C (max) from –40°C to 85°C

Voltage References

文件：2.44667 Mbytes Page：31 Pages

Voltage References

文件：2.44667 Mbytes Page：31 Pages

封装/外壳：SOT-23-5 细型，TSOT-23-5 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.1% SOT23-5 集成电路（IC） 电压基准

Voltage References

文件：2.44667 Mbytes Page：31 Pages

DC/DC转换器

DC/DC转换器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC VREF SERIES 0.04% 8SOIC 集成电路（IC） 电压基准

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation in the 900 MHz communications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting resistors for an

Surface Mount Chip LEDs

Description The MSL-194B, a BLUE source Chip LED device, is designed in an indnstry standard package suitable for SMT assembly method. It utilizes InGaN on SiC LED chip technology and water clear epoxy package. Features Push-Button Backlighting LCD Backlighting Symbol Backlighting Front Pane

Surface Mount Chip LEDs

Description The MSL-194DR, a RED source Chip LED device, is designed in an indnstry standard package suitable for SMT assembly method. It utilizes AlGaAs on GaAs LED chip technology and water clear epoxy package. Features Push-Button Backlighting LCD Backlighting Symbol Backlighting Front Pa

Silicon NPN Transistor Audio Power Amplifier

Description: The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .

LM194/LM394 Supermatch Pair

文件：221.51 Kbytes Page：10 Pages