Precision Micropower, Low Dropout Voltage References

GENERAL DESCRIPTION The REF19x series precision band gap voltage references use a patented temperature drift curvature correction circuit and laser trimming of highly stable, thin-film resistors to achieve a very low temperature coefficient and high initial accuracy. FEATURES Initial ac

Precision, Micropower, High Current Output Voltage Reference

GENERAL DESCRIPTION The ADR3625 is a low power, high precision voltage reference that features a maximum temperature coefficient of 3 ppm/°C for the B grade in an 8-lead MSOP. Capable of sourcing up to 70 mA, the ADR3625 is an exceptional replacement to standard low dropout (LDO) regulators.

Precision, Micropower, High Current Output Voltage References

GENERAL DESCRIPTION The ADR3625ADR3630ADR3650 are low power, high precision voltage references that feature a maximum temperature coefficient of 3 ppm/°C for the B grade in an 8-lead MSOP. Capable of sourcing up to 70 mA, the ADR3625ADR3630ADR3650 are an exceptional replacement to standard lo

2.5V精密、微功耗、低压差、低压基准电压源

REF19x系列精密带隙基准电压源采用温度漂移曲率校正专利电路，并对高稳定性薄膜电阻进行激光调整，从而实现极低的温度系数和高初始精度。 该系列由微功耗、低压差(LDV)器件组成，可利用仅比输出电压高出100 mV的电源提供稳定的输出电压，耗用的电源电流低于45 μA。通过对SLEEP 引脚施加低TTL或CMOS电平，可以使能休眠模式。在休眠模式下，输出关闭，电源电流进一步降至15 µA以下。\n\n REF19x系列基准电压源的额定温度范围为(−40°C 至 +85°C) 工业温度范围，典型性能规格的温度范围为−40°C至 +125°C ，适合汽车等应用领域。\n\n • 初始精度：±2 mV（最大值）\n\n• 温度系数：5 ppm/°C（最大值）\n\n• 低电源电流：45 µA（最大值）\n\n• 休眠模式：15 µA（最大值）;

Ultralow Noise, High Accuracy

文件：993.6 Kbytes Page：32 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

1 Features 1• Two Outputs, VREF and VREF / 2, for Convenient Use in Single-Supply Systems • Excellent Temperature Drift Performance: – 25 ppm/°C (max) from –40°C to 125°C • High Initial Accuracy: ±0.1% (max) • VREF and VBIAS Tracking over Temperature: – 6 ppm/°C (max) from –40°C to 85°C

2.5V Vref、双输出 Vref 和 Vref/2 电压基准

仅具有 正向电源电压的应用通常需要一个在模数转换器 (ADC) 输入范围中间位置的附加稳定电压来偏置输入双极信号。REF19xx 提供了一个可供 ADC 使用的基准电压 (VREF) 和一个可用于偏置输入双极信号的高精度电压 (VBIAS)。\n\nREF19xx 在 VREF 和 VBIAS 输出端具有优异的温度漂移（最大 25 ppm/°C）特性和初始精度 (0.1%)，同时可保持静态电流低于 430µA。此外，VREF 和 VBIAS 输出端可在 –40°C 至 85°C 的温度范围内彼此跟踪，精度达 6 ppm/°C（最大值）。所有这些 特性 都可提高信号链的精度并节省电路板空 • 两个输出，VREF 和 VREF/2，便于在单电源系统中使用\n• 出色的温度漂移性能： \n• -40℃ 至 125℃ 时为 25 ppm/°C（最大值）\n \n• 高初始精度：±0.1%（最大值）\n• 温度范围内的 VREF 和 VBIAS 跟踪： \n• -40℃ 至 85℃ 时为 6 ppm/°C（最大值）\n• -40℃ 至 125℃ 时为 7 ppm/°C（最大值）\n \n• 微型封装：SOT23-5\n• 低压降电压：10mV\n• 高输出电流：±20mA\n• 低静态电流：360µA\n• 线路调节：3 ppm/V \n• 负载调节：8 ppm/mA;

丝印代码：GAGM；REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

1 Features 1• Two Outputs, VREF and VREF / 2, for Convenient Use in Single-Supply Systems • Excellent Temperature Drift Performance: – 25 ppm/°C (max) from –40°C to 125°C • High Initial Accuracy: ±0.1% (max) • VREF and VBIAS Tracking over Temperature: – 6 ppm/°C (max) from –40°C to 85°C

丝印代码：GAGM；REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

1 Features 1• Two Outputs, VREF and VREF / 2, for Convenient Use in Single-Supply Systems • Excellent Temperature Drift Performance: – 25 ppm/°C (max) from –40°C to 125°C • High Initial Accuracy: ±0.1% (max) • VREF and VBIAS Tracking over Temperature: – 6 ppm/°C (max) from –40°C to 85°C

丝印代码：GAGM；REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

1 Features 1• Two Outputs, VREF and VREF / 2, for Convenient Use in Single-Supply Systems • Excellent Temperature Drift Performance: – 25 ppm/°C (max) from –40°C to 125°C • High Initial Accuracy: ±0.1% (max) • VREF and VBIAS Tracking over Temperature: – 6 ppm/°C (max) from –40°C to 85°C

丝印代码：GAGM；REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

1 Features 1• Two Outputs, VREF and VREF / 2, for Convenient Use in Single-Supply Systems • Excellent Temperature Drift Performance: – 25 ppm/°C (max) from –40°C to 125°C • High Initial Accuracy: ±0.1% (max) • VREF and VBIAS Tracking over Temperature: – 6 ppm/°C (max) from –40°C to 85°C

丝印代码：GAGM；REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

1 Features 1• Two Outputs, VREF and VREF / 2, for Convenient Use in Single-Supply Systems • Excellent Temperature Drift Performance: – 25 ppm/°C (max) from –40°C to 125°C • High Initial Accuracy: ±0.1% (max) • VREF and VBIAS Tracking over Temperature: – 6 ppm/°C (max) from –40°C to 85°C

丝印代码：GAGM；REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

1 Features 1• Two Outputs, VREF and VREF / 2, for Convenient Use in Single-Supply Systems • Excellent Temperature Drift Performance: – 25 ppm/°C (max) from –40°C to 125°C • High Initial Accuracy: ±0.1% (max) • VREF and VBIAS Tracking over Temperature: – 6 ppm/°C (max) from –40°C to 85°C

Voltage References

文件：2.44667 Mbytes Page：31 Pages

REF19xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

文件：2.35099 Mbytes Page：31 Pages

Voltage References

文件：2.44667 Mbytes Page：31 Pages

封装/外壳：SOT-23-5 细型，TSOT-23-5 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.1% SOT23-5 集成电路（IC） 电压基准

Voltage References

文件：2.44667 Mbytes Page：31 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC VREF SERIES 0.08% 8SOIC 集成电路（IC） 电压基准

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=47kΩ)

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8 -2.0 V

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT89 package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high-speed and line transformer

Silicon Complementary Transistors Audio Power Output

Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These devices are especially suited for high level linear amplifiers or medium speed switching circuits

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE