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RD6价格
参考价格：￥0.0780
型号：RD6.2M 品牌：NEC 备注：这里有RD6多少钱，2025年最近7天走势，今日出价，今日竞价，RD6批发/采购报价，RD6行情走势销售排行榜，RD6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RD6 | 85 to 265 VAC Input, 15W Output USB Reference Design Board 文件：162.24 Kbytes Page：12 Pages | POWERINTPower Integrations, Inc. 荷兰帕沃英蒂格盛有限公司 |  |   |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  | | |
500 mW PLANAR TYPE SILICON ZENER DIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 3-PIN MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 3-PIN MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 3-PIN MINI MOLD TypeRD2.0MWtoRD39MWSeriesare3-PINMiniMoldPackagezenerdiodespossessingallowablepowerdissipationof200mW. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
1W POWER MINI MOLD ZENER DIODE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION TypeRD2.0StoRD120SSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mW. FEATURES •SharpBreakdowncharacteristic. •Vz:AppliedE24standard. APPLICATIONS CircuitforConstantVoltage,ConstantCurrent,W | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES DESCRIPTION TypeRD4.7SLtoRD39SLSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mWfeaturinglownoiseandsharpbreakdowncharacteristic.Theyareintendedforuseinaudioequipment,instrumentequipment. FEATURES •LowNoise | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
LOW NOISE SHARP BREAKDOWN CHARACTERISTICS ZENER DIODES 2PIN ULTRA SUPER MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 2PIN ULTRA SUPER MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW PLANAR TYPE SILICON ZENER DIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 3-PIN MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 3-PIN MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 3-PIN MINI MOLD TypeRD2.0MWtoRD39MWSeriesare3-PINMiniMoldPackagezenerdiodespossessingallowablepowerdissipationof200mW. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
1W POWER MINI MOLD ZENER DIODE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION TypeRD2.0StoRD120SSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mW. FEATURES •SharpBreakdowncharacteristic. •Vz:AppliedE24standard. APPLICATIONS CircuitforConstantVoltage,ConstantCurrent,W | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES DESCRIPTION TypeRD4.7SLtoRD39SLSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mWfeaturinglownoiseandsharpbreakdowncharacteristic.Theyareintendedforuseinaudioequipment,instrumentequipment. FEATURES •LowNoise | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
LOW NOISE SHARP BREAKDOWN CHARACTERISTICS ZENER DIODES 2PIN ULTRA SUPER MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 2PIN ULTRA SUPER MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
MITSUBISHI RF POWER MOS FET DESCRIPTION RD60HUF1isaMOSFETtypetransistorspecificallydesignedforUHFHighpoweramplifiersapplications. FEATURES HighpowerandHighGain: Pout>60W,Gp>7.7dB@Vdd=12.5V,f=520MHz HighEfficiency:55typ.onUHFBand APPLICATION Foroutputstageofhighpoweramplifie | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW PLANAR TYPE SILICON ZENER DIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 |  | |
RD6产品属性
- 类型
描述
- 型号
RD6
- 制造商
POWERINT
- 制造商全称
Power Integrations, Inc.
- 功能描述
85 to 265 VAC Input, 15W Output USB Reference Design Board
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Winsen(炜盛) |
24+ |
TO5 |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
NEC |
24+ |
NA/ |
5750 |
原厂直销,现货供应,账期支持! |
|||
NEC |
2016+ |
SOT23-3 |
5787 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
23+ |
SOD523 |
20000 |
全新原装假一赔十 |
|||
NEC |
24+ |
O805 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NEC |
22+ |
SOT89 |
100000 |
代理渠道/只做原装/可含税 |
|||
NEC |
25+ |
SOT89 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
NEC |
24+ |
SOD-106 |
45000 |
热卖优势现货 |
|||
NEC |
24+ |
SOD523 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
NEC |
04+ |
O805 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
RD6芯片相关品牌
RD6规格书下载地址
RD6参数引脚图相关
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- RD5132-10-3M0
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- RD5122-10-6M0
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- RD-50A
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- RD5.6P
- RD5.6M
- RD5.6L-T1
- RD5.6K
- RD5.6FM
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2020-5-14RD21XR271K500，RD21ZU224M500W，RD221M10-6X11
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2020-5-6RD13UM-T1原装进口现货
瀚佳科技(深圳)有限公司专业一站式全套配单服务 联系电话0755-23140719/15323480719（微信同号）
2019-1-9
DdatasheetPDF页码索引
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