位置：首页 > IC中文资料第2672页 > RD5.6E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RD5.6E | 500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  |   |
RD5.6E | 500mWPLANARTYPESILICONZENERDIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
RD5.6E | SILICONZENERDIODES 文件：75.04 Kbytes Page：4 Pages | EIC EIC discrete Semiconductors |  | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENERDIODES 文件：162.01 Kbytes Page：5 Pages | EIC EIC discrete Semiconductors | | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECH Semtech Corporation |  | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECH Semtech Corporation | | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECH Semtech Corporation | | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECH Semtech Corporation | | | |
SILICONPLANARZENERDIODE 文件：280.13 Kbytes Page：4 Pages | SEMTECH Semtech Corporation | | |
RD5.6E产品属性
- 类型
描述
- 型号
RD5.6E
- 制造商
Panasonic Industrial Company
- 功能描述
DIODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
NEC |
23+ |
NA |
10486 |
专做原装正品,假一罚百! |
|||
RENESAS |
2014+ |
2000 |
公司现货库存 |
||||
NEC |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
25+23+ |
New |
34379 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
23+ |
原厂原装 |
2880 |
优势库存 |
|||
24+ |
5000 |
公司存货 |
|||||
SUNMATE(森美特) |
2019+ROHS |
SMA(DO-214AC) |
66688 |
森美特高品质产品原装正品免费送样 |
|||
NEC |
24+ |
NA/ |
7500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
ROHS |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
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RD5.6E规格书下载地址
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瀚佳科技(深圳)有限公司专业一站式全套配单服务 联系电话0755-23140719/15323480719（微信同号）
2019-1-9
DdatasheetPDF页码索引
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