位置：首页 > IC中文资料第5841页 > RD4.3E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RD4.3E | 500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  |   |
RD4.3E | 500mWPLANARTYPESILICONZENERDIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
RD4.3E | SILICONZENERDIODES 文件：75.04 Kbytes Page：4 Pages | EIC EIC discrete Semiconductors |  | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400mWDHDZENERDIODEDO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENERDIODES 文件：162.01 Kbytes Page：5 Pages | EIC EIC discrete Semiconductors | | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECH Semtech Corporation |  | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECH Semtech Corporation | | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECH Semtech Corporation | | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECH Semtech Corporation | | | |
SILICONPLANARZENERDIODE 文件：280.13 Kbytes Page：4 Pages | SEMTECH Semtech Corporation | | |
RD4.3E产品属性
- 类型
描述
- 型号
RD4.3E
- 制造商
EIC
- 制造商全称
EIC discrete Semiconductors
- 功能描述
SILICON ZENER DIODES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
20+ |
SOD-106 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
A/N |
1715+ |
SOP |
251156 |
只做原装正品现货假一赔十! |
|||
NEC |
23+ |
NA |
986 |
专做原装正品,假一罚百! |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
NEC |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
25+23+ |
New |
33131 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
Renesa |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
NEC |
23+ |
SOD-106 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
NEC |
23+ |
原厂原装 |
3005 |
优势库存 |
|||
24+ |
5000 |
公司存货 |
RD4.3E芯片相关品牌
RD4.3E规格书下载地址
RD4.3E参数引脚图相关
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- RD4.3ES-AZ-AB3
- RD4.3ES-AZ-AB2
- RD4.3ES-AB1(AZ)
- RD4.3ES
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- RD4.3E-AZ-B1
- RD4.3E-AZ/B2
- RD4.3EAB4
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- RD4.3EAB1
- RD4.3EAB
- RD4
- RD3V9EB2
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- RD3V9EB
- RD3V9
- RD3V6EB2
- RD3V6EB1
- RD3V6EB
- RD3V6
- RD3V3EB2
- RD3V3EB1
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- RD3V3
- RD3V0EB2
- RD3V0EB1
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RD4.3E数据表相关新闻
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2019-1-9
DdatasheetPDF页码索引
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