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RD1价格
参考价格：￥0.0000
型号：RD1/2WP-1.5K 品牌：Misc 备注：这里有RD1多少钱，2025年最近7天走势，今日出价，今日竞价，RD1批发/采购报价，RD1行情走势销售排行榜，RD1报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RD1 | 10 x 10 mm Rotary DIP Switches with 3:3 Pinout 文件：314.36 Kbytes Page：1 Pages | GREATECS Createcs |  |   |
Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode Features •Highbreakdownvoltage(VRRM=400V). •Highreliability. •Easytobemounted,goodheatdissipation. •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |  | | |
Low VF ??High-Speed Switching Diode LowVF•High-SpeedSwitchingDiode Features •Highbreakdownvoltage(VRRM=600V). •Highreliability. •One-pointfixingtypeplasticmoldedpackagefacilitatingeasymountingandheatdissipation. •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Ultrahigh-SpeedSwitchingDiode Features •Highbreakdownvoltage(VRRM=600V). •Highreliability. •One-pointfixingtypeplasticmoldedpackagefacilitatingeasymountingandheatdissipation. •Fastreverserecoverytime. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features •Highbreakdownvoltage(VRRM=600V). •Highreliability. •Easytobemounted,goodheatdissipation. •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  | | |
500 mW PLANAR TYPE SILICON ZENER DIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 |  | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
MOS FET type transistor specifically designed for HF High power amplifiers applications. DESCRIPTION RD100HHF1isaMOSFETtypetransistorspecificallydesignedforHFHighpoweramplifiersapplications. FEATURES HighpowerandHighGain: Pout>100W,Gp>11.5dB@Vdd=12.5V,f=30MHz HighEfficiency:60typ.onHFBand APPLICATION Foroutputstageofhighpoweramplifie | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  | | |
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION TypeRD2.0StoRD120SSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mW. FEATURES •SharpBreakdowncharacteristic. •Vz:AppliedE24standard. APPLICATIONS CircuitforConstantVoltage,ConstantCurrent,W | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
Bidirectional Active USB-C™ Cable for USB3.2 (10G) and DP1.3 (8.1G) Features BidirectionalactiveUSB-Ccablecarrying4LDPor2LDPandUSB3.2 -Supportsupto4LofDisplayPortin/out,withsignalconditioningupto8.1Gbps(supportsHBR3,HBR2,HBR,RBRrates) -SupportsUSB3.1in/out,withsignalconditioningupto10Gbps -SupportsUSB2.0(480Mbps) - | ANALOGIXAnalogix Semiconductor, Inc. 硅谷数模硅谷数模半导体有限公司 |  | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW PLANAR TYPE SILICON ZENER DIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 3-PIN MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 3-PIN MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 3-PIN MINI MOLD TypeRD2.0MWtoRD39MWSeriesare3-PINMiniMoldPackagezenerdiodespossessingallowablepowerdissipationof200mW. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
1W POWER MINI MOLD ZENER DIODE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION TypeRD2.0StoRD120SSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mW. FEATURES •SharpBreakdowncharacteristic. •Vz:AppliedE24standard. APPLICATIONS CircuitforConstantVoltage,ConstantCurrent,W | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES DESCRIPTION TypeRD4.7SLtoRD39SLSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mWfeaturinglownoiseandsharpbreakdowncharacteristic.Theyareintendedforuseinaudioequipment,instrumentequipment. FEATURES •LowNoise | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
LOW NOISE SHARP BREAKDOWN CHARACTERISTICS ZENER DIODES 2PIN ULTRA SUPER MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 2PIN ULTRA SUPER MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW PLANAR TYPE SILICON ZENER DIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | |
RD1产品属性
- 类型
描述
- 型号
RD1
- 制造商
GREATECS
- 制造商全称
GREATECS
- 功能描述
10 x 10 mm Rotary DIP Switches with
- 3
3 Pinout
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
11167 |
支持大陆交货,美金交易。原装现货库存。 |
|||
SAMWHAELECTR |
24+ |
NA/ |
23250 |
原厂直销,现货供应,账期支持! |
|||
NEC |
2016+ |
SOT23-3 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
23+ |
SOT23 |
20000 |
全新原装假一赔十 |
|||
GENERALINSTRUMENTS |
24+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NEC |
24+ |
SOD523 |
45000 |
热卖优势现货 |
|||
NEC |
22+ |
SOT89 |
100000 |
代理渠道/只做原装/可含税 |
|||
NEC |
24+ |
SOT23 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ROHM |
18+ |
QFP |
7500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
三菱 |
12+ |
ROHS |
502 |
原装现货特价实需要详询!可在线咨询!专业元器件!高功率和高增益的MOS FET型晶体管。噘>100W,GP>11.5分贝@ VDD =12.5V,F =30MHz的高效率:60%typ.on HF乐队中的应用对于高功率放大器在HF波段移动无线电设备的输出级 |
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- RD1/4WP-130K
- RD1/4WP-10R
- RD1/2WP-75K
- RD1/2WP-680K
- RD1/2WP-6.8K
- RD1/2WP-1.5K
- RD-0515D/P
- RD-0515D
- RD-0512D/P
- RD-0512D
- RD0506T
- RD-0505D
- RD0504T
- RD-040
- RD0306T-H
- RD0306T
- RD0106T
- RD0027
- RD0026
- RD0023
- RCY21153W
- RCX511N25
- RCX510N25
- RCX450N20
- RCX330N25
- RCX200N20
- RCX160N20
- RCX120N25
- RCX100N25
- RCX080N25
- RCX051N25
- RCWPNM
- RCWPMR
- RCWPM
- RCWP722550R0GKS3
- RCWP72252K21FKWB
- RCWP5150360RJKTN
- RCW-0D
- RCW-0C
- RCVE3
- RCV420
- RCV1551
- RCUCTE
- RCU-0D
- RCU-0C
- RCT6_15
RD1数据表相关新闻
RD04AMS2
RD04AMS2
2020-5-14RD07MUS2B
RD07MUS2B
2020-5-14RD70HUP2
RD70HUP2
2020-5-14RD21XR271K500，RD21ZU224M500W，RD221M10-6X11
RD21XR271K500，RD21ZU224M500W，RD221M10-6X11
2020-5-6RC系列碳纤维组合轴向引线电阻器RC14KT100K
RC系列电阻非常适合脉冲负载处理，提供1/4W和1/2W的功率，5％和10％的容差，以及1Ω至22MΩ的欧姆值
2019-9-11RD13UM-T1原装进口现货
瀚佳科技(深圳)有限公司专业一站式全套配单服务 联系电话0755-23140719/15323480719（微信同号）
2019-1-9
DdatasheetPDF页码索引
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