型号 功能描述 生产厂家 企业 LOGO 操作

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

3 Volt Intel Advanced Boot Block Flash Memory

Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

3 Volt Intel Advanced Boot Block Flash Memory

Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit

INTEL

英特尔

RC28F320C3BA产品属性

  • 类型

    描述

  • 型号

    RC28F320C3BA

  • 功能描述

    IC FLASH 32MBIT 100NS 64BGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    150

  • 系列

    - 格式 -

  • 存储器

    EEPROMs - 串行

  • 存储器类型

    EEPROM

  • 存储容量

    4K(2 x 256 x 8)

  • 速度

    400kHz

  • 接口

    I²C,2 线串口

  • 电源电压

    2.5 V ~ 5.5 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    8-VFDFN 裸露焊盘

  • 供应商设备封装

    8-DFN(2x3)

  • 包装

    管件

  • 产品目录页面

    1445(CN2011-ZH PDF)

更新时间:2026-3-14 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTEL
2016+
BGA
6000
只做原装,假一罚十,公司可开17%增值税发票!
INTEL
24+
BGA-64
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INTEL
23+
BGA
50000
只做原装正品
INTEL
23+
65480
INTEL
24+
QR
65300
一级代理/放心采购
INTEL
22+
TBGA-64
20000
公司只做原装 品质保障
INTEL/英特尔
21+
BGA-64
2366
百域芯优势 实单必成 可开13点增值税
INTEL/英特尔
2517+
BGA
8850
只做原装正品现货或订货假一赔十!
INTEL
25+23+
BGA
12226
绝对原装正品全新进口深圳现货
INTEL
25+
BGA
4500
全新原装、诚信经营、公司现货销售

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