位置：首页 > IC中文资料第4496页 > RC28F320C3B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 |   | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
封装/外壳：64-TBGA 包装：管件 描述：IC FLASH 32MBIT PAR 64EASYBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
IC FLASH 32M PARALLEL 64EASYBGA | MICRON 美光 | | ||
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
3 Volt Intel Advanced Boot Block Flash Memory Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit | INTEL 英特尔 | | ||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
3 Volt Intel Advanced Boot Block Flash Memory Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit | INTEL 英特尔 | |
RC28F320C3B产品属性
- 类型
描述
- 型号
RC28F320C3B
- 功能描述
IC FLASH 32MBIT 100NS 64BGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
150
- 系列
- 格式 -
- 存储器
EEPROMs - 串行
- 存储器类型
EEPROM
- 存储容量
4K(2 x 256 x 8)
- 速度
400kHz
- 接口
I²C，2 线串口
- 电源电压
2.5 V ~ 5.5 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
8-VFDFN 裸露焊盘
- 供应商设备封装
8-DFN（2x3）
- 包装
管件
- 产品目录页面
1445(CN2011-ZH PDF)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTEL/英特尔 |
2517+ |
BGA |
8850 |
只做原装正品现货或订货假一赔十! |
|||
INTEL |
1923+ |
TBGA-64 |
6900 |
只做进口原装品质决定一切价格优惠 |
|||
INTEL |
24+ |
BGA-64 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INTEL |
23+ |
65480 |
|||||
INTEL |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INTEL |
933 |
TBGA-64 |
536 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INTEL |
24+ |
144 |
|||||
INTEL/英特尔 |
24+ |
BGA-64 |
9600 |
原装现货,优势供应,支持实单! |
|||
Micron Technology Inc. |
21+ |
208-LFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
INTEL |
23+ |
TBGA-64 |
3219 |
全新原装正品现货,支持订货 |
RC28F320C3B规格书下载地址
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DdatasheetPDF页码索引
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