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RBV1001

SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * Ideal for printed circuit board * Very good heat dissipation * Pb

SYNSEMI

RBV1001

Silicon Bridge Rectifiers

VOLTAGE RANGE: 50 --- 1000 V CURRENT: 10 A Features ◇ Rating to 1000V PRV ◇ Surge overload rating to 300 Am peres peak ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing m olded plastic technique results in inexpensive product ◇ Lead solderable per MIL-STD-202 m eth

LUGUANG

鲁光电子

RBV1001

Bridges: 10.0 to 50.0 amps

SYNSEMI

RBV1001

SILICON BRIDGE RECTIFIERS

文件:47.58 Kbytes Page:2 Pages

EIC

RBV1001

SILICON BRIDGE RECTIFIERS

文件:19.79 Kbytes Page:2 Pages

EIC

RBV1001

SILICON BRIDGE RECTIFIERS

文件:98.3 Kbytes Page:2 Pages

EIC

RBV1001

SILICON BRIDGE RECTIFIERS

文件:157.18 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON BRIDGE RECTIFIERS

文件:155.83 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON BRIDGE RECTIFIERS

文件:132.79 Kbytes Page:2 Pages

EIC

Bridge Rectifiers

EIC

SILICON BRIDGE RECTIFIERS

文件:41.19 Kbytes Page:2 Pages

EIC

SILICON BRIDGE RECTIFIERS

文件:97.81 Kbytes Page:2 Pages

EIC

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

PANJIT

強茂

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

PANJIT

強茂

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MOTOROLA

摩托罗拉

10-Bit P Compatible A/D Converter

文件:201.08 Kbytes Page:9 Pages

NSC

国半

10-Bit P Compatible A/D Converter

文件:201.08 Kbytes Page:9 Pages

NSC

国半

RBV1001产品属性

  • 类型

    描述

  • part number:

    RBV1001

  • amps:

    10.0

  • voltage:

    100.0

  • data sheet:

    BDG-RBV1000.PDF

更新时间:2026-8-3 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SEP
23+
KBJ6
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
26+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
PANJIT
23+
扁桥
80000
主营桥堆系列,真实库存

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