200mW, Low VF SMD Schottky Barrier Diode

FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant - Packing code with suffix G means green compound (halogen-free)

Schottky Barrier Diode

FEATURES ● Low VF. ● Extremely small mounting type. ● Small surface mounting. APPLICATIONS ● Low current rectification and high speed switching.

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low current rectification and high speed switching applications Features • Extremely small surface mounting type

200mW, Low VF SMD Schottky Barrier Diode

FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant - Packing code with suffix G means green compound (halogen-free)

Small Signal Schottky Diode

Features - Ultra small mold type. - High reliability. - AEC-Q101 Qualified.

SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.2 Ampere

VOLTAGE 30 Volts CURRENT 0.2 Ampere FEATURE * Extremely small surface mounting type. (SC-79/SOD-523) * Io=200mA guaranteed despite size * Low VF. (VF=0.40V Typ. at 200mA) APPLICATION * Low current rectification and high speed switching

Schottky Rectifier - 0.2Amp 30Volt

□ Features - For surface mounted applications - Low profile package - Built-in strain relief - Metal silicon junction, majority carrier conduction - Low power loss, high efficiency - High current capability, low forward voltage drop - For use in low voltage high frequency inverters, free wh