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RB480Y价格

参考价格:¥0.3640

型号:RB480Y 品牌:ROHM 备注:这里有RB480Y多少钱,2026年最近7天走势,今日出价,今日竞价,RB480Y批发/采购报价,RB480Y行情走势销售排行榜,RB480Y报价。
型号 功能描述 生产厂家 企业 LOGO 操作
RB480Y

Schottky barrier diode

Features 1) Ultra small mold type. (EMD4) 2) Low IR 3) High reliability. Applications Low current rectification

ROHM

罗姆

RB480Y

Schottky Barrier Diodes

指正在申请中止制造的产品。 •超小型塑胶型。\n•低IR型、高可靠性。;

ROHM

罗姆

RB480Y

丝印代码:3T;Schottky barrier diode

文件:139.96 Kbytes Page:4 Pages

ROHM

罗姆

RB480Y

Schottky Barrier Diode

文件:1.75623 Mbytes Page:8 Pages

ROHM

罗姆

Schottky Barrier Diode

Features High reliability Small mold type Low IR Application Small current rectification

ROHM

罗姆

Schottky barrier diode

Features 1) Ultra small mold type. (EMD4) 2) Low VF 3) High reliability Applications Low current rectification

ROHM

罗姆

Schottky Barrier Diodes

指正在申请中止制造的产品。 •超小型塑胶型。\n• 低VF型、 高可靠性。;

ROHM

罗姆

Schottky Barrier Diodes (支持 AEC-Q101)

指正在申请中止制造的产品。 •超小型塑胶型。\n• 低VF型、 高可靠性。;

ROHM

罗姆

Schottky barrier diode

文件:139.96 Kbytes Page:4 Pages

ROHM

罗姆

Schottky Barrier Diode

文件:1.75623 Mbytes Page:8 Pages

ROHM

罗姆

丝印代码:7B;Schottky Barrier Diode

文件:1.81381 Mbytes Page:8 Pages

ROHM

罗姆

Schottky Barrier Diode

文件:1.81381 Mbytes Page:8 Pages

ROHM

罗姆

封装/外壳:SC-75-4,SOT-543 包装:卷带(TR) 描述:DIODE SCHOTTKY 40V 200MA EMD2 分立半导体产品 二极管 - 整流器 - 阵列

ROHM

罗姆

封装/外壳:SC-75-4,SOT-543 包装:散装 描述:DIODE ARRAY SCHOTTKY 40V EMD4 分立半导体产品 二极管 - 整流器 - 阵列

ROHM

罗姆

丝印代码:2H;Schottky barrier diode

文件:147.28 Kbytes Page:4 Pages

ROHM

罗姆

丝印代码:2H;Schottky Barrier Diode

文件:1.79875 Mbytes Page:8 Pages

ROHM

罗姆

丝印代码:2H;Schottky barrier diode

文件:154.87 Kbytes Page:4 Pages

ROHM

罗姆

Schottky barrier diode

文件:147.28 Kbytes Page:4 Pages

ROHM

罗姆

Schottky barrier diode

文件:154.87 Kbytes Page:4 Pages

ROHM

罗姆

Schottky Barrier Diode

文件:1.79875 Mbytes Page:8 Pages

ROHM

罗姆

Schottky Barrier Diode

文件:1.85689 Mbytes Page:7 Pages

ROHM

罗姆

Shottky barrier diode

Features High reliability Small mold type Low VF Application Small current rectification

ROHM

罗姆

NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

PHILIPS

飞利浦

丝印代码:P6;NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

PHILIPS

飞利浦

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

NTE

Metal Oxide Varistors (MOV)

Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby

NTE

RB480Y产品属性

  • 类型

    描述

  • Status:

    最终销售

  • 封装:

    EMD4

  • 包装数量:

    8000

  • 最小独立包装数量:

    8000

  • 包装形态:

    Taping

  • RoHS:

    Yes

  • Grade:

    Standard

  • Package Code:

    SOT-543

  • Package(JEITA):

    SC-107A

  • Package Size[mm]:

    1.6x1.6 (t=0.5)

  • Mounting Style:

    Surface mount

  • Number of terminal:

    4

  • Reverse Voltage VR[V]:

    30

  • Average Rectified Forward Current IO[A]:

    0.1

  • IFSM[A]:

    1.0

  • Forward Voltage VF(Max.)[V]:

    0.53

  • IF @ Forward Voltage [A]:

    0.1

  • Reverse Current IR(Max.)[mA]:

    0.001

  • VR @ Reverse Current[V]:

    10

  • Storage Temperature (Min.)[°C]:

    -40

  • Storage Temperature (Max.)[°C]:

    125

更新时间:2026-7-24 9:31:00
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