SILICON BRIDGE RECTIFIERS

VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A FEATURES ◇ Rating to 1000V PRV ◇ Surge overload rating to 50 Amperes peak ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique results in inexpensive product ◇ Mounting Position: Any ◇ Glass pas

Bridge Rectifier

1.5A Glass Passivated Single-Phase Bridge Rectifiers-50-1000V Features • Surge overload rating 50 amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique results in expensive product • Lead-free parts for green partner, meet RoHS

MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS

1.5A Glass Passivated Bridge Rectifier

Features • Glass passivated chip junction • High case dielectric strength • Typical IR less than 0.1µA • High surge current capability • Ideal for printed circuit boards • High temperature soldering guaranteed: 260˚C/10 seconds 0.375” (9.5mm) lead length at 5lbs.(2.3kg) tension • RoHS c

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

Silicon NPN Transistor High Voltage Video Output

Description: The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT. Features: • High Voltage: VCEO = 300V Min @ IC = 5mA • Low Capacitance: Cob = 3pF Max @ VCB = 20V • High Frequency: ft = 50MHz Min @ IC = 15mA • H

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th