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RA352PT

AUTOMOTIVE RECTIFIER

FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low cost * Low leakage * Low forward voltage drop * High current capability

CHENMKO

力勤

RA352PT

汽车整流粒子

PFS

平盛电子

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

ONSEMI

安森美半导体

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

NTE

Square Type

文件:31.46 Kbytes Page:1 Pages

PANASONIC

松下

Square Type

文件:32 Kbytes Page:1 Pages

PANASONIC

松下

LinCMOSE DUAL DIFFERENTIAL COMPARATOR

文件:140.77 Kbytes Page:9 Pages

TI

德州仪器

RA352PT产品属性

  • 类型

    描述

  • I(AV)(A):

    35

  • Ifsm(A):

    400

  • VF@IF(V):

    1.2

  • VF@IF(A):

    35

  • IR(uA):

    25

  • Package:

    RA

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