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型号 功能描述 生产厂家 企业 LOGO 操作
RA352GP

35Amp Glass Passivated Rectifier 50 to 1000 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 • Glass Passivated Chip • Low Leakage, Low cost • Low Forward Voltage Drop • High Cu

MCC

RA352GP

35Amp Glass Passivated Rectifier 50 to 1000 Volts

文件:103.89 Kbytes Page:3 Pages

MCC

RA352GP

普通整流二极管

MCC

封装/外壳:RA 包装:散装 描述:DIODE 分立半导体产品 二极管 - 整流器 - 单

MCC

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

ONSEMI

安森美半导体

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

NTE

Square Type

文件:31.46 Kbytes Page:1 Pages

PANASONIC

松下

Square Type

文件:32 Kbytes Page:1 Pages

PANASONIC

松下

LinCMOSE DUAL DIFFERENTIAL COMPARATOR

文件:140.77 Kbytes Page:9 Pages

TI

德州仪器

RA352GP产品属性

  • 类型

    描述

  • VRM (V):

     100

  • IFSM (A):

     500

  • IF (A):

     35

  • VF (V):

     1.0

  • IFM (A):

     35

  • TRR (μs):

     

  • IR (μA):

     5.0

  • @VR (V):

     100

  • Package Qty:

     Bulk

  • FIT:

     40; Tj=100℃

更新时间:2026-8-2 10:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MCC
25+
电联咨询
7800
公司现货,提供拆样技术支持
Micro Commercial Co
25+
RA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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