8-bit MCU IP

The 8032 series is a high-performance 8051 family compatible micro-controller based on RISC architecture & Pipeline design. This IP Specification of interface timing, external Data Memory read / write timing and external Program Memory read timing are same or faster than standard 80C52 ,based on dif • Instruction compatible with generic 8051\r\n• Two external interrupts\r\n• -64K Byte external RAM & ROM\r\n• 16-bit timer/counter x3\r\n• Data Pointer x1\r\n• Support Power Down and Idle Mode\r\n• 12/4/1 clocks/machine cycle (S/T/TT or TTE/TTEX)\r\n• Dual data pointer (Above T);

8-bit MCU IP

The 8032 series is a high-performance 8051 family compatible micro-controller based on RISC architecture & Pipeline design. This IP Specification of interface timing, external Data Memory read / write timing and external Program Memory read timing are same or faster than standard 80C52 ,based on dif • Instruction compatible with generic 8051\r\n• Two external interrupts\r\n• -64K Byte external RAM & ROM\r\n• 16-bit timer/counter x3\r\n• Data Pointer x1\r\n• Support Power Down and Idle Mode\r\n• 12/4/1 clocks/machine cycle (S/T/TT or TTE/TTEX)\r\n• Dual data pointer (Above T);

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors